Threshold of Surface Initiator Concentration for Polymer Brush Growth by Surface-Initiated Atom Transfer Radical Polymerization

The surface modification of various materials by grafting functional molecules has attracted much attention from fundamental research to practical applications because of its ability to impart various physical and chemical properties to the surfaces. One promising approach is the use of polymer brus...

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Publié dans:Langmuir : the ACS journal of surfaces and colloids. - 1985. - 40(2024), 1 vom: 09. Jan., Seite 480-488
Auteur principal: Sato, Tomoya (Auteur)
Autres auteurs: Dunderdale, Gary J, Hozumi, Atsushi
Format: Article en ligne
Langue:English
Publié: 2024
Accès à la collection:Langmuir : the ACS journal of surfaces and colloids
Sujets:Journal Article
LEADER 01000caa a22002652c 4500
001 NLM366183923
003 DE-627
005 20250305142841.0
007 cr uuu---uuuuu
008 231227s2024 xx |||||o 00| ||eng c
024 7 |a 10.1021/acs.langmuir.3c02756  |2 doi 
028 5 2 |a pubmed25n1220.xml 
035 |a (DE-627)NLM366183923 
035 |a (NLM)38127729 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Sato, Tomoya  |e verfasserin  |4 aut 
245 1 0 |a Threshold of Surface Initiator Concentration for Polymer Brush Growth by Surface-Initiated Atom Transfer Radical Polymerization 
264 1 |c 2024 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Revised 10.01.2024 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a The surface modification of various materials by grafting functional molecules has attracted much attention from fundamental research to practical applications because of its ability to impart various physical and chemical properties to the surfaces. One promising approach is the use of polymer brushes synthesized by atom transfer radical polymerization (ATRP) from surface-tethered initiators (SIs). In this study, for the purpose of controlling the grafting amounts/densities of polymer brushes, we developed a facile method to precisely regulate SI concentrations of SI layers (SILs) by serial dilution based on a sol-gel method. By simply mixing organosilanes terminated with and without an initiator group ((p-chloromethyl) phenyltrimethoxysilane (CMPTMS) and phenyltrimethoxysilane (PTMS), respectively) with tetraethoxysilane (TEOS), SI concentrations of SILs could be arbitrarily tuned precisely by varying dilution factors of (CMPTMS + PTMS)/CMPTMS (DFs, 1-107). The resulting SILs prepared at different DFs were highly smooth and transparent. X-ray photoelectron spectroscopy (XPS) also confirmed that the SIs were homogeneously distributed at the topmost surface of the SILs and their concentrations were proven to be accurately and precisely controlled from high to extremely low, comparable to theoretical values. Subsequent SI-ATRP in air ("paint-on" SI-ATRP) of two different types of monomers (hydrophobic/nonionic (2,3,4,5,6-pentafluorostyrene) and hydrophilic/ionic (sodium 4-styrenesulfonate)) demonstrated that polymer brushes with different grafting amounts/densities were successfully grafted only from SILs with DFs of 1-104 (theoretical SI concentrations: 3.9 × 10-4 ∼ 3.5 units/nm2), while at DFs of 105 and above (theoretical SI concentrations: <3.9 × 10-5 units/nm2), no sign of polymer brush growth was confirmed by thickness, XPS, and water contact angle data. Therefore, we are the first to gather evidence that the approximate threshold of SI concentration required for "paint-on" SI-ATRP might be on the order of 10-4 ∼ 10-5 units/nm2 
650 4 |a Journal Article 
700 1 |a Dunderdale, Gary J  |e verfasserin  |4 aut 
700 1 |a Hozumi, Atsushi  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Langmuir : the ACS journal of surfaces and colloids  |d 1985  |g 40(2024), 1 vom: 09. Jan., Seite 480-488  |w (DE-627)NLM098181009  |x 1520-5827  |7 nnas 
773 1 8 |g volume:40  |g year:2024  |g number:1  |g day:09  |g month:01  |g pages:480-488 
856 4 0 |u http://dx.doi.org/10.1021/acs.langmuir.3c02756  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_22 
912 |a GBV_ILN_350 
912 |a GBV_ILN_721 
951 |a AR 
952 |d 40  |j 2024  |e 1  |b 09  |c 01  |h 480-488