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|a 10.1021/acs.langmuir.3c02298
|2 doi
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|a (DE-627)NLM366030787
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|a (NLM)38112377
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|a DE-627
|b ger
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|a eng
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|a Dhibar, Subhendu
|e verfasserin
|4 aut
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|a Rapid Semiconducting Supramolecular Mg(II)-Metallohydrogel
|b Exploring Its Potential in Nonvolatile Resistive Switching Applications and Antiseptic Wound Healing Properties
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 10.01.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a An effective strategy was employed for the rapid development of a supramolecular metallohydrogel of Mg(II) ion (i.e., MgPEHA) using pentaethylenehexamine (PEHA) as a low-molecular-weight gelator in aqueous medium under ambient conditions. The mechanical stability of the synthesized Mg@PEHA metallohydrogel was characterized by using rheological analysis, which showed its robustness across different angular frequencies and oscillator stress levels. The metallohydrogel exhibited excellent thixotropic behavior, which signifies that Mg@PEHA has a self-healing nature. Field emission scanning electron microscopy and transmission electron microscopy images were utilized to explore the rectangular pebble-like hierarchical network of the Mg@PEHA metallohydrogel. Elemental mapping through energy-dispersive X-ray spectroscopy analysis confirmed the presence of primary chemical constituents in the metallohydrogel. Fourier transform infrared spectroscopy spectroscopy provided insights into the possible formation strategy of the metallohydrogel. In this work, Schottky diode structures in a metal-semiconductor-metal geometry based on a magnesium(II) metallohydrogel (Mg@PEHA) were constructed, and the charge transport behavior was observed. Additionally, a resistive random access memory (RRAM) device was developed using Mg@PEHA, which displayed bipolar resistive switching behavior at room temperature. The researchers investigated the switching mechanism, which involved the formation or rupture of conduction filaments, to gain insights into the resistive switching process. The RRAM device demonstrated excellent performance with a high ON/OFF ratio of approximately 100 and remarkable endurance of over 5000 switching cycles. RRAM devices exhibit good endurance, meaning they can endure a large number of read and write cycles without significant degradation in performance. RRAM devices have shown promising reliability in terms of long-term performance and stability, making them suitable for critical applications that require reliable memory solutions. Significant inhibitory activity against the drug-resistant Klebsiella pneumonia strain and its biofilm formation ability was demonstrated by Mg@PEHA. The minimum inhibitory concentration value of the metallohydrogel was determined to be 3 mg/mL when it was dissolved in 1% DMSO. To study the antibiofilm activity, an MTT assay was performed, revealing that biofilm inhibition (60%) commenced at 1 mg/mL of Mg@PEHA when dissolved in 1% DMSO. Moreover, in the mouse excisional wound model, Mg@PEHA played a crucial role in preventing postoperative wound infections and promoting wound healing
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|a Journal Article
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|a Roy, Arpita
|e verfasserin
|4 aut
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|a Sarkar, Tuhin
|e verfasserin
|4 aut
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|a Das, Priyanka
|e verfasserin
|4 aut
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|a Karmakar, Kripasindhu
|e verfasserin
|4 aut
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|a Bhattacharjee, Subham
|e verfasserin
|4 aut
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|a Mondal, Bijnaneswar
|e verfasserin
|4 aut
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|a Chatterjee, Priyajit
|e verfasserin
|4 aut
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|a Sarkar, Keka
|e verfasserin
|4 aut
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|a Ray, Soumya Jyoti
|e verfasserin
|4 aut
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|a Saha, Bidyut
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 40(2024), 1 vom: 09. Jan., Seite 179-192
|w (DE-627)NLM098181009
|x 1520-5827
|7 nnns
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| 773 |
1 |
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|g volume:40
|g year:2024
|g number:1
|g day:09
|g month:01
|g pages:179-192
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|u http://dx.doi.org/10.1021/acs.langmuir.3c02298
|3 Volltext
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