Interfacial Rivet to Fill Structural Defects : A Spacer Engineering Gift for 3D Solar Cells

© 2023 Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 16 vom: 05. Apr., Seite e2310444
1. Verfasser: Jia, Wei (VerfasserIn)
Weitere Verfasser: Zhao, Qiangqiang, Zhuang, Yan, Wei, Yulin, Tian, Juanhua, Wang, Chenyun, Qiao, Jingyuan, Shi, Guangchao, Shang, Jingzhi, Cheng, Qi, Pang, Shuping, Wang, Kai, Rong, Zi-Qiang, Huang, Wei
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article (HA)2(MA)n−1PbnI3n+1 perovskites 2D/3D perovskite solar cells 2D/3D perovskites grain boundaries high‐quality thin‐film systems
LEADER 01000caa a22002652c 4500
001 NLM365909726
003 DE-627
005 20250305135651.0
007 cr uuu---uuuuu
008 231227s2024 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.202310444  |2 doi 
028 5 2 |a pubmed25n1219.xml 
035 |a (DE-627)NLM365909726 
035 |a (NLM)38100278 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Jia, Wei  |e verfasserin  |4 aut 
245 1 0 |a Interfacial Rivet to Fill Structural Defects  |b A Spacer Engineering Gift for 3D Solar Cells 
264 1 |c 2024 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Revised 18.04.2024 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2023 Wiley‐VCH GmbH. 
520 |a The combination of 2D and 3D perovskites to passivate surfaces or interfaces with a high concentration of defects shows great promise for improving the efficiency of perovskite solar cells (PSCs). Constructing high-quality perovskite film systems by precisely modulating 2D perovskites with good morphologies and growth sites on 3D perovskite films remains a formidable challenge due to the complexity of spacer-engineered surface reactions. In this study, phase-pure 2D (HA)2(MA)n-1PbnI3n+1 perovskites with a controlled number of layers (n) are separated on a large scale and exploited as interface rivets to optimize 3D perovskite films, resulting in tunable film structural defects and grain boundaries. The optimized PSCs system benefits from a reduction in non-radiative recombination, resulting in improved optical performance, higher mobility, and lower trap density. The corresponding device achieves a champion power conversion efficiency (PCE) of more than 25%, especially for voltage (VOC) and fill factor (FF). The quality and uniformity of the perovskite films are further confirmed using large-area devices with an active area of 14 cm2, which exhibits a PCE of more than 21.24%. The high-quality thin-film system based on the 2D perovskites presented herein provides a new perspective for improving the efficiency and stability of PSCs 
650 4 |a Journal Article 
650 4 |a (HA)2(MA)n−1PbnI3n+1 perovskites 
650 4 |a 2D/3D perovskite solar cells 
650 4 |a 2D/3D perovskites 
650 4 |a grain boundaries 
650 4 |a high‐quality thin‐film systems 
700 1 |a Zhao, Qiangqiang  |e verfasserin  |4 aut 
700 1 |a Zhuang, Yan  |e verfasserin  |4 aut 
700 1 |a Wei, Yulin  |e verfasserin  |4 aut 
700 1 |a Tian, Juanhua  |e verfasserin  |4 aut 
700 1 |a Wang, Chenyun  |e verfasserin  |4 aut 
700 1 |a Qiao, Jingyuan  |e verfasserin  |4 aut 
700 1 |a Shi, Guangchao  |e verfasserin  |4 aut 
700 1 |a Shang, Jingzhi  |e verfasserin  |4 aut 
700 1 |a Cheng, Qi  |e verfasserin  |4 aut 
700 1 |a Pang, Shuping  |e verfasserin  |4 aut 
700 1 |a Wang, Kai  |e verfasserin  |4 aut 
700 1 |a Rong, Zi-Qiang  |e verfasserin  |4 aut 
700 1 |a Huang, Wei  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 36(2024), 16 vom: 05. Apr., Seite e2310444  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnas 
773 1 8 |g volume:36  |g year:2024  |g number:16  |g day:05  |g month:04  |g pages:e2310444 
856 4 0 |u http://dx.doi.org/10.1002/adma.202310444  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 36  |j 2024  |e 16  |b 05  |c 04  |h e2310444