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231227s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202310444
|2 doi
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|a pubmed25n1219.xml
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|a (NLM)38100278
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|a DE-627
|b ger
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|e rakwb
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|a eng
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| 100 |
1 |
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|a Jia, Wei
|e verfasserin
|4 aut
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| 245 |
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|a Interfacial Rivet to Fill Structural Defects
|b A Spacer Engineering Gift for 3D Solar Cells
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 18.04.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley‐VCH GmbH.
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|a The combination of 2D and 3D perovskites to passivate surfaces or interfaces with a high concentration of defects shows great promise for improving the efficiency of perovskite solar cells (PSCs). Constructing high-quality perovskite film systems by precisely modulating 2D perovskites with good morphologies and growth sites on 3D perovskite films remains a formidable challenge due to the complexity of spacer-engineered surface reactions. In this study, phase-pure 2D (HA)2(MA)n-1PbnI3n+1 perovskites with a controlled number of layers (n) are separated on a large scale and exploited as interface rivets to optimize 3D perovskite films, resulting in tunable film structural defects and grain boundaries. The optimized PSCs system benefits from a reduction in non-radiative recombination, resulting in improved optical performance, higher mobility, and lower trap density. The corresponding device achieves a champion power conversion efficiency (PCE) of more than 25%, especially for voltage (VOC) and fill factor (FF). The quality and uniformity of the perovskite films are further confirmed using large-area devices with an active area of 14 cm2, which exhibits a PCE of more than 21.24%. The high-quality thin-film system based on the 2D perovskites presented herein provides a new perspective for improving the efficiency and stability of PSCs
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|a Journal Article
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|a (HA)2(MA)n−1PbnI3n+1 perovskites
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|a 2D/3D perovskite solar cells
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|a 2D/3D perovskites
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|a grain boundaries
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|a high‐quality thin‐film systems
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|a Zhao, Qiangqiang
|e verfasserin
|4 aut
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| 700 |
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|a Zhuang, Yan
|e verfasserin
|4 aut
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| 700 |
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|a Wei, Yulin
|e verfasserin
|4 aut
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| 700 |
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|a Tian, Juanhua
|e verfasserin
|4 aut
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| 700 |
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|a Wang, Chenyun
|e verfasserin
|4 aut
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| 700 |
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|a Qiao, Jingyuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Shi, Guangchao
|e verfasserin
|4 aut
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| 700 |
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|a Shang, Jingzhi
|e verfasserin
|4 aut
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| 700 |
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|a Cheng, Qi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Pang, Shuping
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Kai
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Rong, Zi-Qiang
|e verfasserin
|4 aut
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| 700 |
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|a Huang, Wei
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 16 vom: 05. Apr., Seite e2310444
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
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|g volume:36
|g year:2024
|g number:16
|g day:05
|g month:04
|g pages:e2310444
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202310444
|3 Volltext
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