Molecular Simulation of the Impact of Defects on Electrolyte Intrusion in Zeolites

We have investigated through molecular simulation the intrusion of electrolytes in two representative pure-silica zeolites, silicalite-1 and chabazite, in which point defects were introduced in varying amounts. We distinguish between two types of defects, considering either "weak" or "...

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Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1999. - (2023) vom: 13. Dez.
1. Verfasser: de Izarra, Ambroise (VerfasserIn)
Weitere Verfasser: Coudert, François-Xavier, Fuchs, Alain H, Boutin, Anne
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2023
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article
Beschreibung
Zusammenfassung:We have investigated through molecular simulation the intrusion of electrolytes in two representative pure-silica zeolites, silicalite-1 and chabazite, in which point defects were introduced in varying amounts. We distinguish between two types of defects, considering either "weak" or "strong" silanol nest defects, resulting in different hydration behaviors. In the presence of weak defects, the hydration process occurs through a homogeneous nucleation process, while with strong defects, we observe an initial adsorption followed by a filling of the nanoporous volume at a higher pressure. However, we show that electrolytes do not penetrate the zeolites, and these defects appear to have only marginal influence on the thermodynamics of electrolyte intrusion. While replacing pure water by the electrolyte solution shifts the intrusion pressure toward higher values because of the drop of water saturation vapor pressure, an increase in hydrophilicity of the framework due to point defects has the opposite effect, showing that controlling the amount of defects in zeolites is crucial for storage energy applications
Beschreibung:Date Revised 13.12.2023
published: Print-Electronic
Citation Status Publisher
ISSN:1520-5827
DOI:10.1021/acs.langmuir.3c03306