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231226s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202308672
|2 doi
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|a pubmed24n1303.xml
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|a (NLM)38051274
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|a DE-627
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|a eng
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1 |
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|a Liu, Nian
|e verfasserin
|4 aut
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|a Linearly Manipulating Color Emission via Anion Exchange Technology for High Performance Amplified Spontaneous Emission of Perovskites
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|c 2024
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|a Text
|b txt
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 22.02.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a The most attractive advantages of all-inorganic cesium lead halide perovskites are their optical gain over broad spectral ranges through the visible spectrum, so are well suited to use in tunable lasers or broadband amplifiers. Most reported anion exchange reactions face a challenge to achieve the desired halogen-variable perovskites due to rapid and uncontrollable reactions and difficulty to synthesize directly. In this study, a simple vapor/solid anion exchange strategy is demonstrated for controlling the reaction process and realizing a wide range tuning of band gap and amplified spontaneous emission (ASE) wavelength, which exhibits a temperature-dependent anion exchange rate. By optimizing the reaction temperature at 90 °C, the ASE wavelength can be linearly manipulated by just controlling the reaction time. A clear quantitative relationship between ASE peak position and reaction time is achieved. Compares with the CsPbClBr2 film obtained via the liquid phase anion exchange method, the fabricated perovskite films obtained by vapor/solid anion exchange technology exhibit superior film quality and enhanced ASE performance. This work may have applications in the future using facile and controllable techniques to develop high-quality full-color visible lasers
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|a Journal Article
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|a amplified spontaneous emission (ASE)
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|a broad spectral linearly tuning
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|a cesium lead halide perovskites
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| 650 |
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|a vapor/solid anion exchange
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1 |
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|a Luo, Haoyue
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wei, Xiaoyan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zeng, Xin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yang, Jie
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Huang, Yexiong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yu, Peng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Yanping
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Dingke
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Pi, Mingyu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Xinfeng
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 8 vom: 19. Feb., Seite e2308672
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:36
|g year:2024
|g number:8
|g day:19
|g month:02
|g pages:e2308672
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|u http://dx.doi.org/10.1002/adma.202308672
|3 Volltext
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