Functional-Group-Induced Single Quantum Well Dion-Jacobson 2D Perovskite for Efficient and Stable Inverted Perovskite Solar Cells

© 2023 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 8 vom: 30. Feb., Seite e2307422
1. Verfasser: Gong, Cheng (VerfasserIn)
Weitere Verfasser: Chen, Xihan, Zeng, Jie, Wang, Huaxin, Li, Haiyun, Qian, Qingkai, Zhang, Cong, Zhuang, Qixin, Yu, Xuemeng, Gong, Shaokuan, Yang, Hua, Xu, Baomin, Chen, Jiangzhao, Zang, Zhigang
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Dion-Jacobson 2D perovskite buried interface perovskite solar cells phase-pure single quantum well
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520 |a In two-dimensional/three-dimensional (2D/3D) perovskite heterostructure, randomly distributed multiple quantum wells (QW) 2D perovskites are frequently generated, which are detrimental to carrier transport and structural stability. Here, the high quality 2D/3D perovskite heterostructure is constructed by fabricating functional-group-induced single QW Dion-Jacobson (DJ) 2D perovskites. The utilization of ─OCH3 in the precursor solution facilitates the formation of colloidal particles with uniform size, resulting in the production of a pure 2D DJ perovskite with an n value of 3. This strategy facilitates the improvement of 3D structural stability and expedites carrier transport. The resultant devices accomplish a power conversion efficiency of 25.26% (certified 25.04%) and 23.56% at a larger area (1 cm2 ) with negligible hysteresis. The devices maintain >96% and >89% of their initial efficiency after continuous maximum power point tracking under simulated AM1.5 illumination for 1300 h and under damp-heat conditions (85 °C and 85% RH) for 1010 h, respectively 
650 4 |a Journal Article 
650 4 |a Dion-Jacobson 2D perovskite 
650 4 |a buried interface 
650 4 |a perovskite solar cells 
650 4 |a phase-pure 
650 4 |a single quantum well 
700 1 |a Chen, Xihan  |e verfasserin  |4 aut 
700 1 |a Zeng, Jie  |e verfasserin  |4 aut 
700 1 |a Wang, Huaxin  |e verfasserin  |4 aut 
700 1 |a Li, Haiyun  |e verfasserin  |4 aut 
700 1 |a Qian, Qingkai  |e verfasserin  |4 aut 
700 1 |a Zhang, Cong  |e verfasserin  |4 aut 
700 1 |a Zhuang, Qixin  |e verfasserin  |4 aut 
700 1 |a Yu, Xuemeng  |e verfasserin  |4 aut 
700 1 |a Gong, Shaokuan  |e verfasserin  |4 aut 
700 1 |a Yang, Hua  |e verfasserin  |4 aut 
700 1 |a Xu, Baomin  |e verfasserin  |4 aut 
700 1 |a Chen, Jiangzhao  |e verfasserin  |4 aut 
700 1 |a Zang, Zhigang  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 36(2024), 8 vom: 30. Feb., Seite e2307422  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:36  |g year:2024  |g number:8  |g day:30  |g month:02  |g pages:e2307422 
856 4 0 |u http://dx.doi.org/10.1002/adma.202307422  |3 Volltext 
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