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231226s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202310270
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|a pubmed24n1294.xml
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|a DE-627
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|a eng
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|a Li, Ying
|e verfasserin
|4 aut
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|a Multilevel Gradient-Ordered Silicon Anode with Unprecedented Sodium Storage
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|c 2024
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|a Text
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Revised 15.02.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a While cost-effective sodium-ion batteries (SIBs) with crystalline silicon anodes promise high theoretical capacities, they perform poorly because silicon stores sodium ineffectively (capacity <40 mAh g-1 ). To address this issue, herein an atomic-order structural-design tactic is adopted for obtaining unique multilevel gradient-ordered silicon (MGO-Si) by simple electrochemical reconstruction. In situ-formed short-range-, medium-range-, and long-range-ordered structures construct a stable MGO-Si, which contributes to favorable Na-Si interaction and fast ion diffusion channels. These characteristics afford a high reversible capacity (352.7 mAh g-1 at 50 mA g-1 ) and stable cycling performance (95.2% capacity retention after 4000 cycles), exhibiting record values among those reported for pure silicon electrodes. Sodium storage of MGO-Si involves an adsorption-intercalation mechanism, and a stepwise construction strategy of gradient-ordered structure further improves the specific capacity (339.5 mAh g-1 at 100 mA g-1 ). Reconstructed Si/C composites show a high reversible capacity of 449.5 mAh g-1 , significantly better than most carbonaceous anodes. The universality of this design principle is demonstrated for other inert or low-capacity materials (micro-Si, SiO2 , SiC, graphite, and TiO2 ), boosting their capacities by 1.5-6 times that of pristine materials, thereby providing new solutions to facilitate sodium storage capability for better-performing battery designs
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|a Journal Article
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|a gradient-order structure
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|a silicon anode
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|a sodium storage mechanism
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|a sodium-ion batteries
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|a universality of electrochemical reconstruction
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|a Wu, Feng
|e verfasserin
|4 aut
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|a Li, Yu
|e verfasserin
|4 aut
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|a Feng, Xin
|e verfasserin
|4 aut
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|a Zheng, Lumin
|e verfasserin
|4 aut
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|a Liu, Mingquan
|e verfasserin
|4 aut
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1 |
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|a Li, Shuqiang
|e verfasserin
|4 aut
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|a Qian, Ji
|e verfasserin
|4 aut
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|a Wang, Zhaohua
|e verfasserin
|4 aut
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|a Ren, Haixia
|e verfasserin
|4 aut
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|a Gong, Yuteng
|e verfasserin
|4 aut
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|a Wu, Chuan
|e verfasserin
|4 aut
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| 700 |
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|a Bai, Ying
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 7 vom: 28. Feb., Seite e2310270
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:36
|g year:2024
|g number:7
|g day:28
|g month:02
|g pages:e2310270
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|u http://dx.doi.org/10.1002/adma.202310270
|3 Volltext
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