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231226s2024 xx |||||o 00| ||eng c |
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|a 10.1109/TUFFC.2023.3337249
|2 doi
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|a DE-627
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|a eng
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|a Guo, Yong
|e verfasserin
|4 aut
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|a Hetero Acoustic Layer Surface Acoustic Wave Resonator Composed of LiNbO3 and Quartz
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|c 2024
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|a Text
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Revised 10.01.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a In this work, a shear-horizontal (SH) mode surface acoustic wave (SAW) resonator based on LiNbO3 (LN)/Quartz (Qz) hetero acoustic layer (HAL) structure was studied by simulation and experiment. By this HAL structure, the displacement and electric displacement are well confined in the piezoelectric layer. A lower mechanical loss of Qz than that of lossy amorphous SiO2 further enhances the quality ( Q ) factor. In addition, a negative temperature coefficient of frequency (TCF) of LN is compensated by selecting the crystalline orientation of Qz with a positive TCF. According to simulation results, the Euler angles of (0°, 101°, and 0°) and the normalized thickness of 0.2-0.3 λ (wavelength) for LN are selected to obtain a higher impedance ratio ( Z -ratio) and bandwidth (BW). The Euler angles of (0°, 160°, and 90°) for Qz are selected to obtain the positive maximum TCF. The fabricated resonator exhibits a Z -ratio of 95 dB and a BW of 15.9% in the 700 MHz range. The fit figure of merit (FoM) reaches 410, which is the best level ever reported for an LN-based resonator. The TCF of the resonator is -77 ppm/°C at anti-resonance frequency. A group of resonators composed of LN and LN/Qz with thin and thick electrodes were fabricated to further illustrate the good performance of LN/Qz. The LN/Qz HAL SAW resonator demonstrated in this work exhibits a high Z -ratio, low TCF, and wideband, which has the potential for high-performance wideband filters with steep passband and good temperature characteristics
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|a Journal Article
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|a Kadota, Michio
|e verfasserin
|4 aut
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|a Tanaka, Shuji
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t IEEE transactions on ultrasonics, ferroelectrics, and frequency control
|d 1986
|g 71(2024), 1 vom: 27. Jan., Seite 182-190
|w (DE-627)NLM098181017
|x 1525-8955
|7 nnns
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| 773 |
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|g volume:71
|g year:2024
|g number:1
|g day:27
|g month:01
|g pages:182-190
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|u http://dx.doi.org/10.1109/TUFFC.2023.3337249
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