Complete Suppression of Phase Segregation in Mixed-Halide Perovskite Nanocrystals under Periodic Heating

© 2023 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 5 vom: 01. Feb., Seite e2308032
1. Verfasser: Feng, Shengnan (VerfasserIn)
Weitere Verfasser: Ju, Yu, Duan, Rentong, Man, Zaiqin, Li, Shuyi, Hu, Fengrui, Zhang, Chunfeng, Tao, Shuxia, Zhang, Weihua, Xiao, Min, Wang, Xiaoyong
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article mixed-halide perovskite nanocrystal periodic heating phase remixing phase segregation
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520 |a Under continuous light illumination, it is known that localized domains with segregated halide compositions form in semiconducting mixed-halide perovskites, thus severely limiting their optoelectronic applications due to the negative changes in bandgap energies and charge-carrier characteristics. Here mixed-halide perovskite CsPbBr1.2 I1.8 nanocrystals are deposited onto an indium tin oxide substrate, whose temperature can be rapidly changed by ≈10 °C in a few seconds by applying or removing an external voltage. Such a sudden temperature change induces a temporary transition of CsPbBr1.2 I1.8 nanocrystals from the segregated phase to the mixed phase, the latter of which can be permanently maintained when the light illumination is coupled with periodic heating cycles. These findings mark the emergence of a practical solution to the detrimental phase-segregation problem, given that a small temperature modulation is readily available in various fundamental studies and practical devices of mixed-halide perovskites 
650 4 |a Journal Article 
650 4 |a mixed-halide perovskite 
650 4 |a nanocrystal 
650 4 |a periodic heating 
650 4 |a phase remixing 
650 4 |a phase segregation 
700 1 |a Ju, Yu  |e verfasserin  |4 aut 
700 1 |a Duan, Rentong  |e verfasserin  |4 aut 
700 1 |a Man, Zaiqin  |e verfasserin  |4 aut 
700 1 |a Li, Shuyi  |e verfasserin  |4 aut 
700 1 |a Hu, Fengrui  |e verfasserin  |4 aut 
700 1 |a Zhang, Chunfeng  |e verfasserin  |4 aut 
700 1 |a Tao, Shuxia  |e verfasserin  |4 aut 
700 1 |a Zhang, Weihua  |e verfasserin  |4 aut 
700 1 |a Xiao, Min  |e verfasserin  |4 aut 
700 1 |a Wang, Xiaoyong  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 36(2024), 5 vom: 01. Feb., Seite e2308032  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
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