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|a 10.1002/adma.202308975
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|a eng
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| 100 |
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|a Lee, Jinwoo
|e verfasserin
|4 aut
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| 245 |
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|a Advancements of Intense Terahertz Field Focusing on Metallic Nanoarchitectures for Monitoring Hidden Interatomic Gas-Matter Interactions
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|c 2024
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|a Text
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|a ƒaComputermedien
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|a Date Revised 18.01.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH.
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|a With the advancements of nanotechnology, innovative photonic designs coupled with functional materials provide a unique way to acquire, share, and respond effectively to information. It is found that the simple deposition of a 30 nm-thick palladium nanofilm on a terahertz (THz) metasurface chip with a 14 nm-wide effective nanogap of asymmetric materials and geometries allows the tracking of both interatomic and interfacial gas-matter interactions, including gas adsorption, hydrogenation (or dehydrogenation), metal phase changes, and unique water-forming reactions. Combinatorial analyses by simulation and experimental measurements demonstrate the distinct nanostructures, which leads to significant light-matter interactions and corresponding THz absorption in a real-time, highly repeatable, and reliable manner. The complex lattice dynamics and intrinsic properties of metals influenced by hydrogen gas exposure are also thoroughly examined using systematically controlled ternary gas mixture devices that mimic normal temperature and pressure. Furthermore, the novel degrees of freedom are utilized to analyze various physical phenomena, and thus, analytical methods that enable the tracking of unknown hidden stages of water-forming reactions resulting in water growth are introduced. A single exposure of the wave spectrum emphasizes the robustness of the proposed THz nanoscopic probe, bridging the gap between fundamental laboratory research and industry
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|a Journal Article
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|a THz
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|a gas-matter interaction
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|a metasurface
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|a nanogap
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|a nanoscopic probe
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|a Lee, Jongsu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Geon
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Dai-Sik
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ryu, Yong-Sang
|e verfasserin
|4 aut
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| 700 |
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|a Seo, Minah
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 3 vom: 23. Jan., Seite e2308975
|w (DE-627)NLM098206397
|x 1521-4095
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|g volume:36
|g year:2024
|g number:3
|g day:23
|g month:01
|g pages:e2308975
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|u http://dx.doi.org/10.1002/adma.202308975
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