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231226s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202308592
|2 doi
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|a pubmed24n1248.xml
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|a DE-627
|b ger
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|e rakwb
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|a eng
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|a Kim, Hee Jae
|e verfasserin
|4 aut
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|a Gold-Nanolayer-Derived Zincophilicity Suppressing Metallic Zinc Dendrites and Its Efficacy in Improving Electrochemical Stability of Aqueous Zinc-Ion Batteries
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 04.01.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a Herein, an Au-coating layer adjusted on the surface of a Zn metal electrode that effectively suppresses the dendrite growth as well as the mechanisms underlying the dendrite suppression as a result of the zincophilic character of Au is introduced. For the Au-coated Zn metal symmetric cell, uniform deposition of Zn-derived compounds was revealed by operando synchrotron tomography. Microscopic studies demonstrate that the Au-coating layer is induced to form a new Zn-Au alloy during the initial Zn deposition, resulting in stabilized long-term stripping/plating of Zn via the 'embracing effect' that intimately accommodates Zn deposition for further cycles. This property supports the successful operation of symmetrical cells up to 50 mA cm-2 . According to Zn electrodeposition simulation, it is verified that the suppression of dendrite growth is responsible for the electro-conducting Au nanolayer that uniformly distributes the electric field and protects the Zn electrode from corrosion, ultimately promoting uniform Zn growth. The compatibility of the Au-coating layer for full cell configuration is verified using NaV3 O8 as a cathode material over 1 000 cycles. This finding provides a new pathway for the enhancement of the electrochemical performance of ZIBs by suppressing the dendritic growth of Zn by means of a zincophilic Au nanolayer
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|a Journal Article
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|a dendrite suppression
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4 |
|a gold nanolayer coating
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|a zinc-gold alloy
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|a zinc-ion battery
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|a zincophilic surface
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|a Kim, Sun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Suhwan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Sungkyu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Heo, Kwang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lim, Jae-Hong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yashiro, Hitoshi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Shin, Hyeon-Ji
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Jung, Hun-Gi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Yong Min
|e verfasserin
|4 aut
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| 700 |
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|a Myung, Seung-Taek
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 1 vom: 15. Jan., Seite e2308592
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:36
|g year:2024
|g number:1
|g day:15
|g month:01
|g pages:e2308592
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|u http://dx.doi.org/10.1002/adma.202308592
|3 Volltext
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