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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1021/acs.langmuir.3c02719
|2 doi
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|a pubmed24n1231.xml
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|a (DE-627)NLM364380349
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|a (NLM)37946361
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Yan, Dan
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Constructing Dual Cocatalysts of Ni2P-NiS-Decorated TiO2 for Boosting Photocatalytic H2 Evolution
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|c 2023
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| 336 |
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 17.12.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a The loading of cocatalysts is an effective approach to optimize the separation of carriers during photocatalytic processes. Among them, cocatalysts often work independently during the photocatalytic production of H2. However, an investigation of the synergistic effect of dual cocatalysts is beneficial for further promoting photocatalytic H2 production activity. In this work, dual cocatalyst Ni2P-NiS-modified TiO2 nanosheets were fabricated through a solvent evaporation method. The investigation indicates that Ni2P-NiS can widen the light absorption range and reduce the contact angle between TiO2 and water from 26.71 to 8.27°, which facilitates the adsorption of water molecules. Besides, the introduction of Ni2P-NiS can decrease the overpotential of H2 evolution and induce more electrochemically active surface area. The photocatalytic tests show that the H2 production rate of 15% Ni2P-NiS/TiO2 can reach up to 4891.6 μmol·g-1·h-1, which is 30.2, 4.4, and 1.3 times than pure TiO2 (161.8 μmol·g-1·h-1), 15% Ni2P/TiO2 (1112.1 μmol·g-1·h-1), and 15% NiS/TiO2 (3678.1 μmol·g-1·h-1), respectively. The enhancement mechanism of photocatalytic H2 production is attributed to the Schottky barrier effect between Ni2P-NiS nanoparticles and TiO2 nanosheets, which can enormously promote the interface charge separation and transfer, and enhance the kinetics of H2 production. This work provides a potential strategy for enhancement H2 production using appropriate dual cocatalyst-decorated semiconductor materials
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|a Journal Article
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1 |
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|a Miao, Hui
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Fan, Jun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yu, Qiushuo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Enzhou
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Sun, Tao
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 39(2023), 46 vom: 21. Nov., Seite 16648-16656
|w (DE-627)NLM098181009
|x 1520-5827
|7 nnns
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| 773 |
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|g volume:39
|g year:2023
|g number:46
|g day:21
|g month:11
|g pages:16648-16656
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|u http://dx.doi.org/10.1021/acs.langmuir.3c02719
|3 Volltext
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|d 39
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|h 16648-16656
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