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231226s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202308692
|2 doi
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|a pubmed24n1277.xml
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|a (DE-627)NLM364310960
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|a (NLM)37939356
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Xu, Qiaojing
|e verfasserin
|4 aut
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|a Diffusible Capping Layer Enabled Homogeneous Crystallization and Component Distribution of Hybrid Sequential Deposited Perovskite
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 01.02.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a Nowadays, the development of wide-bandgap perovskite by thermal evaporation and spin-coating hybrid sequential deposition (HSD) method has special meaning on textured perovskite/silicon tandem solar cells. However, the common issues of insufficient reaction caused by blocking of perovskite capping layer are exacerbated in HSD, because evaporated precursors are usually denser with higher crystallinity and the widely used additive-assisted microstructure is also difficult to access. Here, a facile "diffusible perovskite capping layer" (DPCL) strategy to solve this dilemma is presented. With DPCL, crystallization alleviation of perovskite and more diffusion channels of organic salts can be realized simultaneously, contributing to a homogenization process. The resultant perovskite films exhibit complete conversion, uniform crystallization, enhanced quality, and reduced defect, leading to obvious improvements in device efficiency, repeatability, and stability. This work offers a way to promote the development of textured tandems a step further
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|a Journal Article
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|a crystallization kinetics
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|a fully textured
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|a hybrid sequential deposition method
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|a perovskite/silicon tandem solar cells
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|a wide-bandgap
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|a Shi, Biao
|e verfasserin
|4 aut
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|a Li, Yucheng
|e verfasserin
|4 aut
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|a Liu, Jingjing
|e verfasserin
|4 aut
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1 |
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|a Li, Yuxiang
|e verfasserin
|4 aut
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|a SunLi, Zetong
|e verfasserin
|4 aut
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|a Liu, Pengfei
|e verfasserin
|4 aut
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|a Zhang, Yubo
|e verfasserin
|4 aut
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|a Sun, Cong
|e verfasserin
|4 aut
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|a Han, Wei
|e verfasserin
|4 aut
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| 700 |
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|a Huang, Qian
|e verfasserin
|4 aut
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|a Zhang, Dekun
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|4 aut
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|a Ren, Huizhi
|e verfasserin
|4 aut
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|a Du, Xiaona
|e verfasserin
|4 aut
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|a Zhao, Ying
|e verfasserin
|4 aut
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|a Zhang, Xiaodan
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 5 vom: 22. Feb., Seite e2308692
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:36
|g year:2024
|g number:5
|g day:22
|g month:02
|g pages:e2308692
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|u http://dx.doi.org/10.1002/adma.202308692
|3 Volltext
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|d 36
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