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231226s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202308370
|2 doi
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|a pubmed24n1303.xml
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|a (DE-627)NLM36430541X
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|a (NLM)37938798
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Liu, Zhou
|e verfasserin
|4 aut
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|a Reducing Perovskite/C60 Interface Losses via Sequential Interface Engineering for Efficient Perovskite/Silicon Tandem Solar Cell
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|c 2024
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|a Text
|b txt
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 22.02.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a Wide-bandgap (WBG) perovskite solar cells hold tremendous potential for realizing efficient tandem solar cells. However, nonradiative recombination and carrier transport losses occurring at the perovskite/electron-selective contact (e.g. C60 ) interface present significant obstacles in approaching their theoretical efficiency limit. To address this, a sequential interface engineering (SIE) strategy that involves the deposition of ethylenediamine diiodide (EDAI2 ) followed by sequential deposition of 4-Fluoro-Phenethylammonium chloride (4F-PEACl) is implemented. The SIE technique synergistically narrows the conduction band offset and reduces recombination velocity at the perovskite/C60 interface. The best-performing WBG perovskite solar cell (1.67 eV) delivers a power conversion efficiency (PCE) of 21.8% and an impressive open-circuit voltage of 1.262 V. Moreover, through integration with double-textured silicon featuring submicrometer pyramid structures, a stabilized PCE of 29.6% is attained for a 1 cm2 monolithic perovskite/silicon tandem cell (certified PCE of 29.0%)
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|a Journal Article
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|a interfacial nonradiative recombination
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|a perovskite/silicon tandem solar cells
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|a sequential interface engineering
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|a wide-bandgap perovskite solar cells
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|a Li, Hongjiang
|e verfasserin
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|a Chu, Zijing
|e verfasserin
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|a Xia, Rui
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|a Wen, Jin
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|a Mo, Yi
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|a Zhu, Hesheng
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|a Luo, Haowen
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|a Zheng, Xuntian
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|a Huang, Zilong
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|a Luo, Xin
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|a Wang, Bo
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|a Zhang, Xueling
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|a Yang, Guangtao
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|a Feng, Zhiqiang
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|a Chen, Yifeng
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|a Kong, Wenchi
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|a Gao, Jifan
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|a Tan, Hairen
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 8 vom: 01. Feb., Seite e2308370
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:36
|g year:2024
|g number:8
|g day:01
|g month:02
|g pages:e2308370
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|u http://dx.doi.org/10.1002/adma.202308370
|3 Volltext
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