Phase-Controlled Growth of 1T'-MoS2 Nanoribbons on 1H-MoS2 Nanosheets

© 2023 Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 17 vom: 01. Apr., Seite e2307269
1. Verfasser: Wang, Yongji (VerfasserIn)
Weitere Verfasser: Zhai, Wei, Ren, Yi, Zhang, Qinghua, Yao, Yao, Li, Siyuan, Yang, Qi, Zhou, Xichen, Li, Zijian, Chi, Banlan, Liang, Jinzhe, He, Zhen, Gu, Lin, Zhang, Hua
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article (opto)electronic devices 1H/1T′ heterophase structures metastable phase phase selective growth transition metal dichalcogenides
Beschreibung
Zusammenfassung:© 2023 Wiley‐VCH GmbH.
2D heterostructures are emerging as alternatives to conventional semiconductors, such as silicon, germanium, and gallium nitride, for next-generation electronics and optoelectronics. However, the direct growth of 2D heterostructures, especially for those with metastable phases still remains challenging. To obtain 2D transition metal dichalcogenides (TMDs) with designed phases, it is highly desired to develop phase-controlled synthetic strategies. Here, a facile chemical vapor deposition method is reported to prepare vertical 1H/1T' MoS2 heterophase structures. By simply changing the growth atmosphere, semimetallic 1T'-MoS2 can be in situ grown on the top of semiconducting 1H-MoS2, forming vertical semiconductor/semimetal 1H/1T' heterophase structures with a sharp interface. The integrated device based on the 1H/1T' MoS2 heterophase structure displays a typical rectifying behavior with a current rectifying ratio of ≈103. Moreover, the 1H/1T' MoS2-based photodetector achieves a responsivity of 1.07 A W-1 at 532 nm with an ultralow dark current of less than 10-11 A. The aforementioned results indicate that 1H/1T' MoS2 heterophase structures can be a promising candidate for future rectifiers and photodetectors. Importantly, the approach may pave the way toward tailoring the phases of TMDs, which can help us utilize phase engineering strategies to promote the performance of electronic devices
Beschreibung:Date Revised 25.04.2024
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202307269