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231226s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202308429
|2 doi
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|a pubmed25n1211.xml
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|a (DE-627)NLM363581936
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|a (NLM)37865868
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Li, Jiaqiang
|e verfasserin
|4 aut
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| 245 |
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|a Space-Confined Synthesis of Monolayer Graphdiyne in MXene Interlayer
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 15.02.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a Graphdiyne (GDY) is an artificial carbon allotrope that is conceptually similar to graphene but composed of sp- and sp2 -hybridized carbon atoms. Monolayer GDY (ML-GDY) is predicted to be an ideal 2D semiconductor material with a wide range of applications. However, its synthesis has posed a significant challenge, leading to difficulties in experimentally validating theoretical properties. Here, it is reported that in situ acetylenic homocoupling of hexaethynylbenzene within the sub-nanometer interlayer space of MXene can effectively prevent out-of-plane growth or vertical stacking of the material, resulting in ML-GDY with in-plane periodicity. The subsequent exfoliation process successfully yields free-standing GDY monolayers with micrometer-scale lateral dimensions. The fabrication of field-effect transistor on free-standing ML-GDY makes the first measurement of its electronic properties possible. The measured electrical conductivity (5.1 × 103 S m-1 ) and carrier mobility (231.4 cm2 V-1 s-1 ) at room temperature are remarkably higher than those of the previously reported multilayer GDY materials. The space-confined synthesis using layered crystals as templates provides a new strategy for preparing 2D materials with precisely controlled layer numbers and long-range structural order
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|a Journal Article
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|a MXene interlayer
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|a confined-space
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|a electronic properties
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|a graphdiyne
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4 |
|a monolayer
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1 |
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|a Cao, Haicheng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Qingxiao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Hui
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Qing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Cailing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Shi, Zhan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Guanxing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kong, Ya
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cai, Yichen
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Shen, Jie
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wu, Ying
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lai, Zhiping
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Han, Yu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Jin
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 7 vom: 31. Feb., Seite e2308429
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
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|g volume:36
|g year:2024
|g number:7
|g day:31
|g month:02
|g pages:e2308429
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|u http://dx.doi.org/10.1002/adma.202308429
|3 Volltext
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