Solvent Effect on the Nanotextural Formation of Reduced Graphene Oxide Membranes

Solvent is involved in many wet-chemical synthesis and bottom-up assembly processes. Understanding its influence on the nanotextural formation of the resultant assemblies is essential for the design and control of the properties for targeted applications. With wet chemically reduced graphene oxide (...

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Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1992. - 39(2023), 43 vom: 31. Okt., Seite 15260-15267
1. Verfasser: Cao, Yang (VerfasserIn)
Weitere Verfasser: Zu, Lianhai, Du, Xiaoyang, Franks, George V, Liang, Qinghua, Li, Dan
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2023
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article
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520 |a Solvent is involved in many wet-chemical synthesis and bottom-up assembly processes. Understanding its influence on the nanotextural formation of the resultant assemblies is essential for the design and control of the properties for targeted applications. With wet chemically reduced graphene oxide (rGO) membranes as a materials platform, this study investigates the solvent effect on nanotexture formation in 2D nanomaterial-based membranes through light scattering and electrochemical characterization. Our finding indicates that the nanotexture of the resultant rGO membrane is largely correlated to the dielectric constant of the solvent. Specifically, solvents with higher dielectric constants yield rGO membranes with more wrinkled, loosely stacked, and less graphitized structures. In contrast, solvents with a lower dielectric constant tend to yield densely stacked structures with larger graphitized domains. Our finding underscores the important role of solvents in wet processing and nanoengineering of 2D nanomaterial-based membranes and provides valuable insights for their controlled synthesis and application 
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700 1 |a Zu, Lianhai  |e verfasserin  |4 aut 
700 1 |a Du, Xiaoyang  |e verfasserin  |4 aut 
700 1 |a Franks, George V  |e verfasserin  |4 aut 
700 1 |a Liang, Qinghua  |e verfasserin  |4 aut 
700 1 |a Li, Dan  |e verfasserin  |4 aut 
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