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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202307703
|2 doi
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|a pubmed25n1209.xml
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|a (DE-627)NLM363052577
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|a (NLM)37812077
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Xu, Meili
|e verfasserin
|4 aut
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| 245 |
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|a Nonvolatile Memory Organic Light-Emitting Transistors
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 28.11.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a In the field of active-matrix organic light emitting display (AMOLED), large-size and ultra-high-definition AMOLED applications have escalated the demand for the integration density of driver chips. However, as Moore's Law approaches the limit, the traditional technology of improving integration density that relies on scaling down device dimension is facing a huge challenge. Thus, developing a multifunctional and highly integrated device is a promising route for improving the integration density of pixel circuits. Here, a novel nonvolatile memory ferroelectric organic light-emitting transistor (Fe-OLET) device which integrates the switching capability, light-emitting capability and nonvolatile memory function into a single device is reported. The nonvolatile memory function of Fe-OLET is achieved through the remnant polarization property of ferroelectric polymer, enabling the device to maintain light emission at zero gate bias. The reliable nonvolatile memory operations are also demonstrated. The proof-of-concept device optimized through interfacial modification approach exhibits 20 times improved field-effect mobility and five times increased luminance. The integration of nonvolatile memory, switching and light-emitting capabilities within Fe-OLET provides a promising internal-storage-driving paradigm, thus creating a new pathway for deploying storage capacitor-free circuitry to improve the pixel aperture ratio and the integration density of circuits toward the on-chip advanced display applications
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|a Journal Article
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|a ferroelectric polymers
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|a interface optimization
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|a nonvolatile memories
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|a organic light-emitting transistors
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1 |
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|a Zhao, Changbin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Meng, Zhimin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yan, Hao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Hongming
|e verfasserin
|4 aut
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1 |
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|a Jiang, Zhixiang
|e verfasserin
|4 aut
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1 |
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|a Jiang, Zhuonan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Hong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Meng, Lingqiang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hui, Wei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Su, Zhenhuang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Yueyue
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Zhenhui
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Jianing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Gao, Yuanhong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a He, Yaowu
|e verfasserin
|4 aut
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| 700 |
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|a Meng, Hong
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 48 vom: 16. Nov., Seite e2307703
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
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|g volume:35
|g year:2023
|g number:48
|g day:16
|g month:11
|g pages:e2307703
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202307703
|3 Volltext
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|d 35
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