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|a 10.1002/adma.202304121
|2 doi
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|a pubmed24n1234.xml
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|a (DE-627)NLM362994250
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|a (NLM)37805835
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Jin, Huaimin
|e verfasserin
|4 aut
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|a Bandgap Engineering of Erbium-Metallofullerenes toward Switchable Photoluminescence
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 21.12.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a Encapsulating photoluminescent lanthanide ions like erbium (Er) into fullerene cages affords photoluminescent endohedral metallofullerenes (EMFs). Few reported photoluminescent Er-EMFs are all based on encapsulation of multiple (two to three) metal atoms, whereas mono-Er-EMFs exemplified by ErC82 are not photoluminescent due to its narrow optical bandgap. Herein, by entrapping an Er-cyanide cluster into various C82 cages to form novel Er-monometallic cyanide clusterfullerenes (CYCFs), ErCN@C82 (C2 (5), Cs (6), and C2 v (9)), the photoluminescent properties of CYCFs are investigated, and obvious near-infrared (NIR) photoluminescence only is observed for ErCN@C2 (5)-C82 . Combined with a comparative photoluminescence study of three medium-bandgap di-Er-EMFs, including Er2 @Cs (6)-C82 , Er2 O@Cs (6)-C82 , and Er2 C2 @Cs (6)-C82 , this study proposes that the optical bandgap can be used as a simple criterion for switching the photoluminescence of Er-EMFs, and the bandgap threshold is determined to be between 0.83 and 0.74 eV. Furthermore, the photoluminescent patterns of these three di-Er-EMFs differ dramatically. It is found that the location of the Er atom within the same Cs (6)-C82 cage is almost fixed and independent on the endo-unit; thus the previous statement on the key role of metal position in photoluminescence of di-Er-EMFs seems erroneous, and the geometric configuration of the endo-unit, especially the bridging mode of two Er ions, is decisive instead
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|a Journal Article
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|a cyanide cluster
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|a endohedral metallofullerenes
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|a erbium
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|a optical bandgap
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|a photoluminescence
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|a Xin, Jinpeng
|e verfasserin
|4 aut
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|a Xiang, Wenhao
|e verfasserin
|4 aut
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|a Jiang, Zhanxin
|e verfasserin
|4 aut
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|a Han, Xinyi
|e verfasserin
|4 aut
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|a Chen, Muqing
|e verfasserin
|4 aut
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|a Du, Pingwu
|e verfasserin
|4 aut
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|a Yao, Yang-Rong
|e verfasserin
|4 aut
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|a Yang, Shangfeng
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 51 vom: 07. Dez., Seite e2304121
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:35
|g year:2023
|g number:51
|g day:07
|g month:12
|g pages:e2304121
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|u http://dx.doi.org/10.1002/adma.202304121
|3 Volltext
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|d 35
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|e 51
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