Exchange Bias Between van der Waals Materials : Tilted Magnetic States and Field-Free Spin-Orbit-Torque Switching

© 2024 Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 13 vom: 01. März, Seite e2305739
1. Verfasser: Cham, Thow Min Jerald (VerfasserIn)
Weitere Verfasser: Dorrian, Reiley J, Zhang, Xiyue S, Dismukes, Avalon H, Chica, Daniel G, May, Andrew F, Roy, Xavier, Muller, David A, Ralph, Daniel C, Luo, Yunqiu Kelly
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article CrSBr Fe3Ge2Te3 exchange bias field‐free spin–orbit‐torque switching magnetic van der Waals heterostructures non‐uniform spin configuration uniaxial magnetocrystalline anistropy
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520 |a Magnetic van der Waals heterostructures provide a unique platform to study magnetism and spintronics device concepts in the 2D limit. Here, studies of exchange bias from the van der Waals antiferromagnet CrSBr acting on the van der Waals ferromagnet Fe3GeTe2 (FGT) are reported. The orientation of the exchange bias is along the in-plane easy axis of CrSBr, perpendicular to the out-of-plane anisotropy of the FGT, inducing a strongly tilted magnetic configuration in the FGT. Furthermore, the in-plane exchange bias provides sufficient symmetry breaking to allow deterministic spin-orbit torque switching of the FGT in CrSBr/FGT/Pt samples at zero applied magnetic field. A minimum thickness of the CrSBr of >10 nm is needed to provide a non-zero exchange bias at 30 K 
650 4 |a Journal Article 
650 4 |a CrSBr 
650 4 |a Fe3Ge2Te3 
650 4 |a exchange bias 
650 4 |a field‐free spin–orbit‐torque switching 
650 4 |a magnetic van der Waals heterostructures 
650 4 |a non‐uniform spin configuration 
650 4 |a uniaxial magnetocrystalline anistropy 
700 1 |a Dorrian, Reiley J  |e verfasserin  |4 aut 
700 1 |a Zhang, Xiyue S  |e verfasserin  |4 aut 
700 1 |a Dismukes, Avalon H  |e verfasserin  |4 aut 
700 1 |a Chica, Daniel G  |e verfasserin  |4 aut 
700 1 |a May, Andrew F  |e verfasserin  |4 aut 
700 1 |a Roy, Xavier  |e verfasserin  |4 aut 
700 1 |a Muller, David A  |e verfasserin  |4 aut 
700 1 |a Ralph, Daniel C  |e verfasserin  |4 aut 
700 1 |a Luo, Yunqiu Kelly  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 36(2024), 13 vom: 01. März, Seite e2305739  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:36  |g year:2024  |g number:13  |g day:01  |g month:03  |g pages:e2305739 
856 4 0 |u http://dx.doi.org/10.1002/adma.202305739  |3 Volltext 
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