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231226s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202307024
|2 doi
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|a pubmed24n1248.xml
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|a (DE-627)NLM362359105
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|a (NLM)37739404
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|a DE-627
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|c DE-627
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|a eng
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|a Zou, Yuqin
|e verfasserin
|4 aut
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|a A Practical Approach Toward Highly Reproducible and High-Quality Perovskite Films Based on an Aging Treatment
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 04.01.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH.
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|a Solution processing of hybrid perovskite semiconductors is a highly promising approach for the fabrication of cost-effective electronic and optoelectronic devices. However, challenges with this approach lie in overcoming the controllability of the perovskite film morphology and the reproducibility of device efficiencies. Here, a facile and practical aging treatment (AT) strategy is reported to modulate the perovskite crystal growth to produce sufficiently high-quality perovskite thin films with improved homogeneity and full-coverage morphology. The resulting AT-films exhibit fewer defects, faster charge carrier transfer/extraction, and suppressed non-radiative recombination compared with reference. The AT-devices achieve a noticeable improvement in the reproducibility, operational stability, and photovoltaic performance of devices, with the average efficiency increased by 16%. It also demonstrates the feasibility and scalability of AT strategy in optimizing the film morphology and device performance for other perovskite components including MAPbI3 , (MAPbBr3 )15 (FAPbI3 )85 , and Cs0.05 (MAPbBr3 )0.17 (FAPbI3 )0.83 . This method opens an effective avenue to improve the quality of perovskite films and photovoltaic devices in a scalable and reproducible manner
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|a Journal Article
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|a aging treatment
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|a charge carrier kinetics
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|a film morphology
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|a perovskite films
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|a perovskite solar cells
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|a Bai, Xinyu
|e verfasserin
|4 aut
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1 |
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|a Kahmann, Simon
|e verfasserin
|4 aut
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1 |
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|a Dai, Linjie
|e verfasserin
|4 aut
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1 |
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|a Yuan, Shuai
|e verfasserin
|4 aut
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|a Yin, Shanshan
|e verfasserin
|4 aut
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|a Heger, Julian E
|e verfasserin
|4 aut
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|a Schwartzkopf, Matthias
|e verfasserin
|4 aut
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|a Roth, Stephan V
|e verfasserin
|4 aut
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|a Chen, Chun-Chao
|e verfasserin
|4 aut
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|a Zhang, Jianping
|e verfasserin
|4 aut
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1 |
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|a Stranks, Samuel D
|e verfasserin
|4 aut
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|a Friend, Richard H
|e verfasserin
|4 aut
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|a Müller-Buschbaum, Peter
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 1 vom: 02. Jan., Seite e2307024
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:36
|g year:2024
|g number:1
|g day:02
|g month:01
|g pages:e2307024
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|u http://dx.doi.org/10.1002/adma.202307024
|3 Volltext
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|d 36
|j 2024
|e 1
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|c 01
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