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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202305549
|2 doi
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|a pubmed24n1429.xml
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|a (DE-627)NLM362325979
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|a (NLM)37735999
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|a DE-627
|b ger
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|a eng
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|a Orr, Kieran W P
|e verfasserin
|4 aut
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|a Imaging Light-Induced Migration of Dislocations in Halide Perovskites with 3D Nanoscale Strain Mapping
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|c 2023
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|a Text
|b txt
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 05.06.2024
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|a published: Print-Electronic
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|a ErratumIn: Adv Mater. 2024 Jun 5:e2406703. doi: 10.1002/adma.202406703. - PMID 38837808
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH.
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|a In recent years, halide perovskite materials have been used to make high-performance solar cells and light-emitting devices. However, material defects still limit device performance and stability. Here, synchrotron-based Bragg coherent diffraction imaging is used to visualize nanoscale strain fields, such as those local to defects, in halide perovskite microcrystals. Significant strain heterogeneity within MAPbBr3 (MA = CH3 NH3 + ) crystals is found in spite of their high optoelectronic quality, and both 〈100〉 and 〈110〉 edge dislocations are identified through analysis of their local strain fields. By imaging these defects and strain fields in situ under continuous illumination, dramatic light-induced dislocation migration across hundreds of nanometers is uncovered. Further, by selectively studying crystals that are damaged by the X-ray beam, large dislocation densities and increased nanoscale strains are correlated with material degradation and substantially altered optoelectronic properties assessed using photoluminescence microscopy measurements. These results demonstrate the dynamic nature of extended defects and strain in halide perovskites, which will have important consequences for device performance and operational stability
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|a Journal Article
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|a coherent X-ray diffraction imaging
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|a dislocations
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|a halide perovskite
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|a Diao, Jiecheng
|e verfasserin
|4 aut
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|a Lintangpradipto, Muhammad Naufal
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|a Batey, Darren J
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|a Iqbal, Affan N
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|a Kahmann, Simon
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|a Frohna, Kyle
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|a Dubajic, Milos
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|a Zelewski, Szymon J
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|a Dearle, Alice E
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|a Selby, Thomas A
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|a Li, Peng
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|a Doherty, Tiarnan A S
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|a Hofmann, Stephan
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|a Bakr, Osman M
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|a Robinson, Ian K
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|a Stranks, Samuel D
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|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 46 vom: 03. Nov., Seite e2305549
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:35
|g year:2023
|g number:46
|g day:03
|g month:11
|g pages:e2305549
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|u http://dx.doi.org/10.1002/adma.202305549
|3 Volltext
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