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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202303144
|2 doi
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|a pubmed24n1207.xml
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|a (DE-627)NLM362291047
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|a (NLM)37732391
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|a DE-627
|b ger
|c DE-627
|e rakwb
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| 041 |
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|a eng
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| 100 |
1 |
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|a Wen, Kaichuan
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Continuous-Wave Lasing in Perovskite LEDs with an Integrated Distributed Feedback Resonator
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|c 2023
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| 336 |
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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| 338 |
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 02.11.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a Realization of electrically pumped laser diodes based on solution-processed semiconductors is a long-standing challenge. Metal halide perovskites have shown great potential toward this goal due to their excellent optoelectronic properties. Continuous-wave (CW) optically pumped lasing in a real electroluminescent device represents a key step to current-injection laser diodes, but it has not yet been realized. This is mainly due to the challenge of incorporating a resonant cavity into an efficient light-emitting diode (LED) able to sustain intensive carrier injection. Here, CW lasing is reported in an efficient perovskite LED with an integrated distributed feedback resonator, which shows a low lasing threshold of 220 W cm-2 at 110 K. Importantly, the LED works well at a current density of 330 A cm-2 , indicating the carrier injection rate already exceeds the threshold of optically pumping. The results suggest that electrically pumped perovskite laser diodes can be achieved once the Joule heating issue is overcome
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|a Journal Article
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|a continuous-wave
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|a light-emitting diodes
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4 |
|a metal halide perovskites
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4 |
|a perovskite lasers
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1 |
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|a Cao, Yu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Gu, Lianghui
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Saixue
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Qian, Dongmin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Jingmin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kuang, Zhiyuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Luo, Mengyi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Gang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Guan, Shuzhen
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Mengmeng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yang, Heng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xing, Guichuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Nana
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhu, Lin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Peng, Qiming
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Huang, Wei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Jianpu
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 44 vom: 21. Nov., Seite e2303144
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
8 |
|g volume:35
|g year:2023
|g number:44
|g day:21
|g month:11
|g pages:e2303144
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202303144
|3 Volltext
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|a GBV_USEFLAG_A
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|a SYSFLAG_A
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|a GBV_ILN_350
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|a AR
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|d 35
|j 2023
|e 44
|b 21
|c 11
|h e2303144
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