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231226s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202306533
|2 doi
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|a pubmed25n1207.xml
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|a DE-627
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|a eng
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|a Yang, Tingting
|e verfasserin
|4 aut
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|a Stabilizing the Deep Sodiation Process in Layered Sodium Manganese Cathodes by Anchoring Boron Ions
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|c 2024
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|a Text
|b txt
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 25.04.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley‐VCH GmbH.
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|a Advanced high-energy-density sodium-ion batteries (SIBs) are inseparable from cathode materials with high specific capacities. Layered manganese-rich oxides (NaxMnO2, 0.6 ≤ x ≤1) are promising cathode materials owing to their ease of intercalation and extraction of a considerable amount of sodium ions. However, lattice interactions, especially electrostatic repulsive forces and anisotropic stresses, are usually caused by deep desodiatin/sodiation process, resulting in intragranular cracks and capacity degradation in SIBs. Here, boron ions are introduced into the layered structure to build up B─O─Mn bonds. The regulated electronic structure in Na0.637B0.038MnO2 (B-NMO) materials inhibits the deformation of MnO6 octahedra, which finally achieves a gentle structural transition during the deep sodiation process. B-NMO electrode exhibits a high capacity (141 mAh g-1) at 1 C with a capacity retention of 81% after 100 cycles. Therefore, anchoring boron to manganese-rich materials inhibits the detrimental structural evolution of deep sodiation and can be used to obtain excellent cathode materials for SIBs
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|a Journal Article
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|a anisotropic strain
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|a deep sodiation
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|a in situ pair distribution function analysis
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|a manganese‐rich oxides
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|a Li, Qiang
|e verfasserin
|4 aut
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|a Liu, Zhengbo
|e verfasserin
|4 aut
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|a Li, Tianyi
|e verfasserin
|4 aut
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|a Wiaderek, Kamila M
|e verfasserin
|4 aut
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|a Liu, Yingxia
|e verfasserin
|4 aut
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|a Yin, Zijia
|e verfasserin
|4 aut
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|a Lan, Si
|e verfasserin
|4 aut
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|a Wang, Wei
|e verfasserin
|4 aut
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|a Tang, Yu
|e verfasserin
|4 aut
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|a Ren, Yang
|e verfasserin
|4 aut
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| 700 |
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|a Liu, Qi
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 17 vom: 21. Apr., Seite e2306533
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
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|g volume:36
|g year:2024
|g number:17
|g day:21
|g month:04
|g pages:e2306533
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|u http://dx.doi.org/10.1002/adma.202306533
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