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231226s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202305479
|2 doi
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|a pubmed24n1256.xml
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|a (DE-627)NLM362025142
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|a (NLM)37705254
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|a DE-627
|b ger
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|e rakwb
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|a eng
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|a Zhao, Sanchuan
|e verfasserin
|4 aut
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|a Aramid Nanodielectrics for Ultraconformal Transparent Electronic Skins
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 11.01.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a On-skin electronics require minimal thicknesses and decent transparency for conformal contact, imperceptible wearing, and visual aesthetics. It is challenging to search for advanced ultrathin dielectrics capable of supporting the active components while maintaining bending softness, easy handling, and wafer-scale processability. Here, self-delaminated aramid nanodielectrics (ANDs) are demonstrated, enabling any skin-like electronics easily exfoliated from the processing substrates after complicated nanofabrication. In addition, ANDs are mechanically strong, chemically and thermally stable, transparent and breathable, therefore are ideal substrates for soft electronics. As demonstrated, compliant epidermal electrodes comprising silver nanowires and ANDs can successfully record high-quality electromyogram signals with low motion artifacts and satisfying sweat and water resistance. Furthermore, ANDs can serve as both substrates and dielectrics in single-walled carbon nanotube field-effect transistors (FETs) with a merely 160-nm thickness, which can be operated within 4 V with on/off ratios of 1.4 ± 0.5 × 105 , mobilities of 39.9 ± 2.2 cm2 V-1 s-1 , and negligible hysteresis. The ultraconformal FETs can function properly when wrapped around human hair without any degradation in performance
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|a Journal Article
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|a aramid nanofibers
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|a carbon nanotubes
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|a field-effect transistors
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|a nanodielectrics
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|a skin electrodes
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|a Zhao, Yingtao
|e verfasserin
|4 aut
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|a Li, Chenning
|e verfasserin
|4 aut
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|a Wang, Wei
|e verfasserin
|4 aut
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|a Liu, Hai-Yang
|e verfasserin
|4 aut
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|a Cui, Lei
|e verfasserin
|4 aut
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| 700 |
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|a Li, Xiang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yang, Zhenhua
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Anni
|e verfasserin
|4 aut
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| 700 |
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|a Wang, Yurou
|e verfasserin
|4 aut
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| 700 |
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|a Lin, Yuxuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hao, Tailang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yin, Jun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kang, Joohoon
|e verfasserin
|4 aut
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| 700 |
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|a Zhu, Jian
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 2 vom: 31. Jan., Seite e2305479
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:36
|g year:2024
|g number:2
|g day:31
|g month:01
|g pages:e2305479
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|u http://dx.doi.org/10.1002/adma.202305479
|3 Volltext
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