Impacts to FeRAM Design Arising From Interfacial Dielectric Layers and Wake-Up Modulation in Ferroelectric Hafnium Zirconium Oxide

As ferroelectric hafnium zirconium oxide (HZO) becomes more widely utilized in ferroelectric microelectronics, integration impacts of intentional and nonintentional dielectric interfaces and their effects upon the ferroelectric film wake-up (WU) and circuit parameters become important to understand....

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Publié dans:	IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 71(2024), 2 vom: 13. Feb., Seite 323-331
Auteur principal:	Henry, M David (Auteur)
Autres auteurs:	Smith, Sean Weston, Fields, Shelby S, Jaszewski, Samantha T, Esteves, Giovanni, Heinrich, Helge, Ihlefeld, Jon F
Format:	Article en ligne
Langue:	English
Publié:	2024
Accès à la collection:	IEEE transactions on ultrasonics, ferroelectrics, and frequency control
Sujets:	Journal Article