Surfactant-Free Ultrasonication-Assisted Synthesis of 2d Tellurium Based on Metastable 1T'-MoTe2

Surfactant-Free Ultrasonication-Assisted Synthesis of 2d Tellurium Based on Metastable 1T'-MoTe2

© 2023 Wiley‐VCH GmbH.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 17 vom: 11. Apr., Seite e2306962
Auteur principal: Qi, Junlei (Auteur)
Autres auteurs: Dai, Yongping, Ma, Chen, Ke, Chengxuan, Wang, Wenbin, Wu, Zongxiao, Wang, Xiang, Bao, Kai, Xu, Yue, Huang, Haoxin, Wang, Lingzhi, Wu, Jingkun, Luo, Guangfu, Chen, Ye, Lin, Zhaoyang, He, Qiyuan
Format: Article en ligne
Langue:English
Publié: 2024
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article elemental 2D materials liquid‐gated transistor liquid‐phase exfoliation tellurene xenes
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520 |a Elemental 2D materials (E2DMs) have been attracting considerable attention owing to their chemical simplicity and excellent/exotic properties. However, the lack of robust chemical synthetic methods seriously limits their potential. Here, a surfactant-free liquid-phase synthesis of high-quality 2D tellurium is reported based on ultrasonication-assisted exfoliation of metastable 1T'-MoTe2. The as-grown 2D tellurium nanosheets exhibit excellent single crystallinity, ideal 2D morphology, surfactant-free surface, and negligible 1D by-products. Furthermore, a unique growth mechanism based on the atomic escape of Te atoms from metastable transition metal dichalcogenides and guided 2D growth in the liquid phase is proposed and verified. 2D tellurium-based field-effect transistors show ultrahigh hole mobility exceeding 1000 cm2 V-1 s-1 at room temperature attributing to the high crystallinity and surfactant-free surface, and exceptional chemical and operational stability using both solid-state dielectric and liquid-state electrical double layer. The facile ultrasonication-assisted synthesis of high-quality 2D tellurium paves the way for further exploration of E2DMs and expands the scope of liquid-phase exfoliation (LPE) methodology toward the controlled wet-chemical synthesis of functional nanomaterials 
650 4 |a Journal Article 
650 4 |a elemental 2D materials 
650 4 |a liquid‐gated transistor 
650 4 |a liquid‐phase exfoliation 
650 4 |a tellurene 
650 4 |a xenes 
700 1 |a Dai, Yongping  |e verfasserin  |4 aut 
700 1 |a Ma, Chen  |e verfasserin  |4 aut 
700 1 |a Ke, Chengxuan  |e verfasserin  |4 aut 
700 1 |a Wang, Wenbin  |e verfasserin  |4 aut 
700 1 |a Wu, Zongxiao  |e verfasserin  |4 aut 
700 1 |a Wang, Xiang  |e verfasserin  |4 aut 
700 1 |a Bao, Kai  |e verfasserin  |4 aut 
700 1 |a Xu, Yue  |e verfasserin  |4 aut 
700 1 |a Huang, Haoxin  |e verfasserin  |4 aut 
700 1 |a Wang, Lingzhi  |e verfasserin  |4 aut 
700 1 |a Wu, Jingkun  |e verfasserin  |4 aut 
700 1 |a Luo, Guangfu  |e verfasserin  |4 aut 
700 1 |a Chen, Ye  |e verfasserin  |4 aut 
700 1 |a Lin, Zhaoyang  |e verfasserin  |4 aut 
700 1 |a He, Qiyuan  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 36(2024), 17 vom: 11. Apr., Seite e2306962  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnas 
773 1 8 |g volume:36  |g year:2024  |g number:17  |g day:11  |g month:04  |g pages:e2306962 
856 4 0 |u http://dx.doi.org/10.1002/adma.202306962  |3 Volltext 
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