Native Silicon Oxide Properties Determined by Doping

The physico-chemical properties of native oxide layers, spontaneously forming on crystalline Si wafers in air, can be strictly correlated to the dopant type and doping level. In particular, our investigations focused on oxide layers formed upon air exposure in a clean room after Si wafer production,...

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Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1992. - 39(2023), 35 vom: 05. Sept., Seite 12430-12451
1. Verfasser: Della Ciana, Michele (VerfasserIn)
Weitere Verfasser: Kovtun, Alessandro, Summonte, Caterina, Candini, Andrea, Cavalcoli, Daniela, Gentili, Denis, Nipoti, Roberta, Albonetti, Cristiano
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2023
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article