|
|
|
|
| LEADER |
01000caa a22002652c 4500 |
| 001 |
NLM360649165 |
| 003 |
DE-627 |
| 005 |
20250305040032.0 |
| 007 |
cr uuu---uuuuu |
| 008 |
231226s2024 xx |||||o 00| ||eng c |
| 024 |
7 |
|
|a 10.1002/adma.202302297
|2 doi
|
| 028 |
5 |
2 |
|a pubmed25n1201.xml
|
| 035 |
|
|
|a (DE-627)NLM360649165
|
| 035 |
|
|
|a (NLM)37565385
|
| 040 |
|
|
|a DE-627
|b ger
|c DE-627
|e rakwb
|
| 041 |
|
|
|a eng
|
| 100 |
1 |
|
|a Feng, Runfa
|e verfasserin
|4 aut
|
| 245 |
1 |
0 |
|a Selective Control of Phases and Electronic Structures of Monolayer TaTe2
|
| 264 |
|
1 |
|c 2024
|
| 336 |
|
|
|a Text
|b txt
|2 rdacontent
|
| 337 |
|
|
|a ƒaComputermedien
|b c
|2 rdamedia
|
| 338 |
|
|
|a ƒa Online-Ressource
|b cr
|2 rdacarrier
|
| 500 |
|
|
|a Date Revised 18.01.2024
|
| 500 |
|
|
|a published: Print-Electronic
|
| 500 |
|
|
|a Citation Status PubMed-not-MEDLINE
|
| 520 |
|
|
|a © 2023 Wiley-VCH GmbH.
|
| 520 |
|
|
|a Transition metal dichalcogenide (TMDC) films exhibit rich phases and superstructures, which can be controlled by the growth conditions as well as post-growth annealing treatment. Here, the selective growth of monolayer TaTe2 films with different phases as well as superstructures using molecular beam epitaxy (MBE) is reported. Monolayer 1H-TaTe2 and 1T-TaTe2 films can be selectively controlled by varying the growth temperature, and their different electronic structures are revealed through the combination of angle-resolved photoemission spectroscopy measurements (ARPES) and first-principles calculations. Moreover, post-growth annealing of the 1H-TaTe2 film further leads to a transition from a 19 × 19 $\sqrt {19}{\times }\sqrt {19}$ superstructure to a new 2 × 2 superstructure, where two gaps are observed in the electronic structure and persist up to room temperature. First-principles calculations reveal the role of the phonon instability in the formation of superstructures and the effect of local atomic distortions on the modified electronic structures. This work demonstrates the manipulation of the rich phases and superstructures of monolayer TaTe2 films by controlling the growth kinetics and post-growth annealing
|
| 650 |
|
4 |
|a Journal Article
|
| 650 |
|
4 |
|a angle-resolved photoemission spectroscopy
|
| 650 |
|
4 |
|a charge density waves
|
| 650 |
|
4 |
|a molecular beam epitaxy
|
| 650 |
|
4 |
|a monolayer TaTe2
|
| 700 |
1 |
|
|a Wang, Wei
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Bao, Changhua
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Zhang, Zichun
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Wang, Fei
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Zhang, Hongyun
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Yao, Junjie
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Xu, Yong
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Yu, Pu
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Ji, Shuai-Hua
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Si, Chen
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Zhou, Shuyun
|e verfasserin
|4 aut
|
| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 3 vom: 11. Jan., Seite e2302297
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
|
| 773 |
1 |
8 |
|g volume:36
|g year:2024
|g number:3
|g day:11
|g month:01
|g pages:e2302297
|
| 856 |
4 |
0 |
|u http://dx.doi.org/10.1002/adma.202302297
|3 Volltext
|
| 912 |
|
|
|a GBV_USEFLAG_A
|
| 912 |
|
|
|a SYSFLAG_A
|
| 912 |
|
|
|a GBV_NLM
|
| 912 |
|
|
|a GBV_ILN_350
|
| 951 |
|
|
|a AR
|
| 952 |
|
|
|d 36
|j 2024
|e 3
|b 11
|c 01
|h e2302297
|