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231226s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202304808
|2 doi
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|a pubmed25n1199.xml
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|a (DE-627)NLM360050026
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|a (NLM)37505096
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|a DE-627
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|a eng
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|a Man, Ping
|e verfasserin
|4 aut
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|a Salt-Induced High-Density Vacancy-Rich 2D MoS2 for Efficient Hydrogen Evolution
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 25.04.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley‐VCH GmbH.
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|a Emerging non-noble metal 2D catalysts, such as molybdenum disulfide (MoS2), hold great promise in hydrogen evolution reactions. The sulfur vacancy is recognized as a key defect type that can activate the inert basal plane to improve the catalytic performance. Unfortunately, the method of introducing sulfur vacancies is limited and requires costly post-treatment processes. Here, a novel salt-assisted chemical vapor deposition (CVD) method is demonstrated for synthesizing ultrahigh-density vacancy-rich 2H-MoS2, with a controllable sulfur vacancy density of up to 3.35 × 1014 cm-2. This approach involves a pre-sprayed potassium chloridepromoter on the growth substrate. The generation of such defects is closely related to ion adsorption in the growth process, the unstable MoS2-K-H2O triggers the formation of sulfur vacancies during the subsequent transfer process, and it is more controllable and nondestructive when compared to traditional post-treatment methods. The vacancy-rich monolayer MoS2 exhibits exceptional catalytic activity based on the microcell measurements, with an overpotential of ≈158.8 mV (100 mA cm-2) and a Tafel slope of 54.3 mV dec-1 in 0.5 m H2SO4 electrolyte. These results indicate a promising opportunity for modulating sulfur vacancy defects in MoS2 using salt-assisted CVD growth. This approach represents a significant leap toward achieving better control over the catalytic performances of 2D materials
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|a Journal Article
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|a 2D MoS2
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|a chemical vapor deposition
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|a hydrogen evolution reactions
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|a salt‐assisted
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|a sulfur vacancies
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|a Jiang, Shan
|e verfasserin
|4 aut
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|a Leung, Ka Ho
|e verfasserin
|4 aut
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1 |
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|a Lai, Ka Hei
|e verfasserin
|4 aut
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1 |
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|a Guang, Zhiqiang
|e verfasserin
|4 aut
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|a Chen, Honglin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Huang, Lingli
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Tianren
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Gao, Shan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Peng, Yung-Kang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Chun-Sing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Deng, Qingming
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhao, Jiong
|e verfasserin
|4 aut
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| 700 |
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|a Ly, Thuc Hue
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 17 vom: 28. Apr., Seite e2304808
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
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|g volume:36
|g year:2024
|g number:17
|g day:28
|g month:04
|g pages:e2304808
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202304808
|3 Volltext
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|d 36
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