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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202303139
|2 doi
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|a pubmed24n1199.xml
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|a (DE-627)NLM35994003X
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|a (NLM)37493870
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Zhang, Fu
|e verfasserin
|4 aut
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| 245 |
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|a Buried-Interface Engineering of Conformal 2D/3D Perovskite Heterojunction for Efficient Perovskite/Silicon Tandem Solar Cells on Industrially Textured Silicon
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 20.10.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a Exploring strategies to control the crystallization and modulate interfacial properties for high-quality perovskite film on industry-relevant textured crystalline silicon solar cells is highly valued in the perovskite/silicon tandem photovoltaics community. The formation of a 2D/3D perovskite heterojunction is widely employed to passivate defects and suppress ion migration in the film surface of perovskite solar cells. However, realizing solution-processed heterostructures at the buried interface faces solvent incompatibilities with the challenge of underlying-layer disruption, and texture incompatibilities with the challenge of uneven coverage. Here, a hybrid two-step deposition method is used to prepare robust 2D perovskites with cross-linkable ligands underneath the 3D perovskite. This structurally coherent interlayer benefits by way of preferred crystal growth of strain-free and uniform upper perovskite, inhibits interfacial defect-induced instability and recombination, and promotes charge-carrier extraction with ideal energy-level alignment. The broad applicability of the bottom-contact heterostructure for different textured substrates with conformal coverage and various precursor solutions with intact properties free of erosion are demonstrated. With this buried interface engineering strategy, the resulting perovskite/silicon tandem cells, based on industrially textured Czochralski (CZ) silicon, achieve a certified efficiency of 28.4% (1.0 cm2 ), while retaining 89% of the initial PCE after over 1000 h operation
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|a Journal Article
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|a buried interfacial engineering
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|a perovskite heterojunctions
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|a perovskite/silicon tandem solar cells
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|a texture compatibilities
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|a Tu, Binbin
|e verfasserin
|4 aut
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|a Yang, Shaofei
|e verfasserin
|4 aut
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|a Fan, Ke
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Zhiliang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xiong, Zhijun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Jie
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Wei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Huang, Haitao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yu, Cao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a K-Y Jen, Alex
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yao, Kai
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 42 vom: 26. Okt., Seite e2303139
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:35
|g year:2023
|g number:42
|g day:26
|g month:10
|g pages:e2303139
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202303139
|3 Volltext
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|d 35
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