Intrinsic Ferromagnetic Semiconductors with High Saturation Magnetization from Hybrid Perovskites

© 2023 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 35(2023), 42 vom: 17. Okt., Seite e2303945
1. Verfasser: Sun, Bing (VerfasserIn)
Weitere Verfasser: Yan, Ze, Cao, Yang, Ding, Shuaishuai, Li, Rongjin, Ma, Bo, Li, Xiang-Yang, Yang, Huan, Yin, Wei, Zhang, Yamin, Wang, Qiang, Shao, Xiangfeng, Yang, Dezheng, Xue, Desheng, Zhang, Hao-Li
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2023
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article conductivity ferromagnetic semiconductors hybrid perovskites saturation magnetization
LEADER 01000caa a22002652c 4500
001 NLM359878105
003 DE-627
005 20250305020525.0
007 cr uuu---uuuuu
008 231226s2023 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.202303945  |2 doi 
028 5 2 |a pubmed25n1199.xml 
035 |a (DE-627)NLM359878105 
035 |a (NLM)37487594 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Sun, Bing  |e verfasserin  |4 aut 
245 1 0 |a Intrinsic Ferromagnetic Semiconductors with High Saturation Magnetization from Hybrid Perovskites 
264 1 |c 2023 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Revised 20.10.2023 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2023 Wiley-VCH GmbH. 
520 |a Ferromagnetic semiconductors (FMS) enable simultaneous control of both charge and spin transport of charge carriers, and they have emerged as a class of highly desirable but rare materials for applications in spin field-effect transistors and quantum computing. Organic-inorganic hybrid perovskites with high compositional adjustability and structural versatility can offer unique benefits in the design of FMS but has not been fully explored. Here, a series of molecular FMSs based on the 2D organic-inorganic hybrid perovskite structure, namely (2ampy)CuCl4 , (3ampy)CuCl4 , and (4ampy)CuCl4 , is demonstrated, which exhibits high saturation magnetization, dramatic temperature-dependent conductivity change, and tunable ferromagnetic resonance. Magnetic measurements reveal a high saturation magnetization up to 18.56 emu g-1 for (4ampy)CuCl4 , which is one of the highest value among reported hybrid FMSs to date. Conductivity studies of the three FMSs demonstrate that the smaller adjacent octahedron distance in the 2D layer results in higher conductivity. Systematic ferromagnetic resonance investigation shows that the gyromagnetic ratio and Landau factor values are strongly dependent on the types of organic cations used. This work demonstrates that 2D hybrid perovskite materials can simultaneously possess both tunable long-range ferromagnetic ordering and semiconductivity, providing a straightforward strategy for designing and synthesizing high-performance intrinsic FMSs 
650 4 |a Journal Article 
650 4 |a conductivity 
650 4 |a ferromagnetic semiconductors 
650 4 |a hybrid perovskites 
650 4 |a saturation magnetization 
700 1 |a Yan, Ze  |e verfasserin  |4 aut 
700 1 |a Cao, Yang  |e verfasserin  |4 aut 
700 1 |a Ding, Shuaishuai  |e verfasserin  |4 aut 
700 1 |a Li, Rongjin  |e verfasserin  |4 aut 
700 1 |a Ma, Bo  |e verfasserin  |4 aut 
700 1 |a Li, Xiang-Yang  |e verfasserin  |4 aut 
700 1 |a Yang, Huan  |e verfasserin  |4 aut 
700 1 |a Yin, Wei  |e verfasserin  |4 aut 
700 1 |a Zhang, Yamin  |e verfasserin  |4 aut 
700 1 |a Wang, Qiang  |e verfasserin  |4 aut 
700 1 |a Shao, Xiangfeng  |e verfasserin  |4 aut 
700 1 |a Yang, Dezheng  |e verfasserin  |4 aut 
700 1 |a Xue, Desheng  |e verfasserin  |4 aut 
700 1 |a Zhang, Hao-Li  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 35(2023), 42 vom: 17. Okt., Seite e2303945  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnas 
773 1 8 |g volume:35  |g year:2023  |g number:42  |g day:17  |g month:10  |g pages:e2303945 
856 4 0 |u http://dx.doi.org/10.1002/adma.202303945  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 35  |j 2023  |e 42  |b 17  |c 10  |h e2303945