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231226s2025 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202305044
|2 doi
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|a pubmed25n1524.xml
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|a (DE-627)NLM359870791
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|a (NLM)37486859
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Wang, Hao
|e verfasserin
|4 aut
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| 245 |
1 |
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|a 2D Ferroic Materials for Nonvolatile Memory Applications
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|c 2025
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| 336 |
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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| 338 |
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 08.08.2025
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a The emerging nonvolatile memory technologies based on ferroic materials are promising for producing high-speed, low-power, and high-density memory in the field of integrated circuits. Long-range ferroic orders observed in 2D materials have triggered extensive research interest in 2D magnets, 2D ferroelectrics, 2D multiferroics, and their device applications. Devices based on 2D ferroic materials and heterostructures with an atomically smooth interface and ultrathin thickness have exhibited impressive properties and significant potential for developing advanced nonvolatile memory. In this context, a systematic review of emergent 2D ferroic materials is conducted here, emphasizing their recent research on nonvolatile memory applications, with a view to proposing brighter prospects for 2D magnetic materials, 2D ferroelectric materials, 2D multiferroic materials, and their relevant devices
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|a Journal Article
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|a Review
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|a 2D materials
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| 650 |
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4 |
|a ferroelectrics
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| 650 |
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4 |
|a magnets
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| 650 |
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4 |
|a multiferroics
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| 650 |
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4 |
|a nonvolatile memory
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| 700 |
1 |
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|a Wen, Yao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zeng, Hui
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xiong, Ziren
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Tu, Yangyuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhu, Hao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cheng, Ruiqing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yin, Lei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Jiang, Jian
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhai, Baoxing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Chuansheng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Shan, Chongxin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a He, Jun
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 37(2025), 31 vom: 01. Aug., Seite e2305044
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
8 |
|g volume:37
|g year:2025
|g number:31
|g day:01
|g month:08
|g pages:e2305044
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202305044
|3 Volltext
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