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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202304118
|2 doi
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|a pubmed24n1197.xml
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|a (DE-627)NLM35937980X
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|a (NLM)37437137
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|a DE-627
|b ger
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|e rakwb
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|a eng
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| 100 |
1 |
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|a Feng, Xiaoqiang
|e verfasserin
|4 aut
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|a Phase Engineering of 2D Spinel-Type Manganese Oxides
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 20.10.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a 2D magnetic materials have been of interest due to their unique long-range magnetic ordering in the low-dimensional regime and potential applications in spintronics. Currently, most studies are focused on strippable van der Waals magnetic materials with layered structures, which typically suffer from a poor stability and scarce species. Spinel oxides have a good environmental stability and rich magnetic properties. However, the isotropic bonding and close-packed nonlayered crystal structure make their 2D growth challenging, let alone the phase engineering. Herein, a phase-controllable synthesis of 2D single-crystalline spinel-type oxides is reported. Using the van der Waals epitaxy strategy, the thicknesses of the obtained tetragonal and hexagonal manganese oxide (Mn3 O4 ) nanosheets can be tuned down to 7.1 nm and one unit cell (0.7 nm), respectively. The magnetic properties of these two phases are evaluated using vibrating-sample magnetometry and first-principle calculations. Both structures exhibit a Curie temperature of 48 K. Owing to its ultrathin geometry, the Mn3 O4 nanosheet exhibits a superior ultraviolet detection performance with an ultralow noise power density of 0.126 pA Hz-1/2 . This study broadens the range of 2D magnetic semiconductors and highlights their potential applications in future information devices
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|a Journal Article
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|a 2D magnetic spinel
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|a 2D oxide semiconductors
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|a phase engineering
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|a ultrathin Mn3O4 nanosheets
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|a ultraviolet detection
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| 700 |
1 |
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|a Zhai, Baoxing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cheng, Ruiqing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yin, Lei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wen, Yao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Jiang, Jian
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Hao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Zhongwei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhu, Yushan
|e verfasserin
|4 aut
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| 700 |
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|a He, Jun
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 42 vom: 12. Okt., Seite e2304118
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:35
|g year:2023
|g number:42
|g day:12
|g month:10
|g pages:e2304118
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|u http://dx.doi.org/10.1002/adma.202304118
|3 Volltext
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