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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202302554
|2 doi
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|a pubmed24n1196.xml
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|a (DE-627)NLM359074340
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|a (NLM)37406283
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Peddigari, Mahesh
|e verfasserin
|4 aut
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| 245 |
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|a Giant Energy Density via Mechanically Tailored Relaxor Ferroelectric Behavior of PZT Thick Film
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 09.11.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a Relaxor ferroelectrics (RFEs) are being actively investigated for energy-storage applications due to their large electric-field-induced polarization with slim hysteresis and fast energy charging-discharging capability. Here, a novel nanograin engineering approach based upon high kinetic energy deposition is reported, for mechanically inducing the RFE behavior in a normal ferroelectric Pb(Zr0.52 Ti0.48 )O3 (PZT), which results in simultaneous enhancement in the dielectric breakdown strength (EDBS ) and polarization. Mechanically transformed relaxor thick films with 4 µm thickness exhibit an exceptional EDBS of 540 MV m-1 and reduced hysteresis with large unsaturated polarization (103.6 µC cm-2 ), resulting in a record high energy-storage density of 124.1 J cm-3 and a power density of 64.5 MW cm-3 . This fundamental advancement is correlated with the generalized nanostructure design that comprises nanocrystalline phases embedded within the amorphous matrix. Microstructure-tailored ferroelectric behavior overcomes the limitations imposed by traditional compositional design methods and provides a feasible pathway for realization of high-performance energy-storage materials
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|a Journal Article
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|a aerosol deposition
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|a amorphous structures
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|a breakdown strength
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|a energy-storage density
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|a nanograins
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|a relaxor ferroelectrics
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|a Wang, Bo
|e verfasserin
|4 aut
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|a Wang, Rui
|e verfasserin
|4 aut
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|a Yoon, Woon-Ha
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|4 aut
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|a Jang, Jongmoon
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|4 aut
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|a Lee, Hyunjong
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|a Song, Kyung
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|4 aut
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|a Hwang, Geon-Tae
|e verfasserin
|4 aut
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|a Wang, Kai
|e verfasserin
|4 aut
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|a Hou, Yuchen
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|4 aut
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|a Palneedi, Haribabu
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|4 aut
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|a Yan, Yongke
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|4 aut
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|a Choi, Han Seung
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|4 aut
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|a Wang, Jianjun
|e verfasserin
|4 aut
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|a Talluri, Aravindkrishna
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|4 aut
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|a Chen, Long-Qing
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|4 aut
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|a Priya, Shashank
|e verfasserin
|4 aut
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|a Jeong, Dae-Yong
|e verfasserin
|4 aut
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|a Ryu, Jungho
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 45 vom: 04. Nov., Seite e2302554
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:35
|g year:2023
|g number:45
|g day:04
|g month:11
|g pages:e2302554
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202302554
|3 Volltext
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