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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202302393
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|a pubmed24n1196.xml
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|a (DE-627)NLM358917352
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|a (NLM)37390486
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|a DE-627
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|a eng
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|a Zhuang, Xinmeng
|e verfasserin
|4 aut
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|a Trivalent Europium-Doped CsCl Quantum Dots for MA-Free Perovskite Solar Cells with Inherent Bandgap through Lattice Strain Compensation
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|c 2023
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|a Text
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 04.10.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a Cesium-formamidinium (Cs-FA) perovskites have garnered widespread interest owing to their excellent thermal- and photostability in achieving stable perovskite solar cells (PSCs). However, Cs-FA perovskite typically suffers from Cs+ and FA+ mismatches, affecting the Cs-FA morphology and lattice distortion, resulting in an enlarged bandgap (Eg ). In this work, "upgraded" CsCl, Eu3+ -doped CsCl quantum dots, are developed to solve the key issues in Cs-FA PSCs and also exploit the advantage of Cs-FA PSCs on stability. The introduction of Eu3+ promotes the formation of high-quality Cs-FA films by adjusting the Pb-I cluster. CsCl:Eu3+ also offsets the local strain and lattice contraction induced by Cs+ , which maintains the inherent Eg of FAPbI3 and decreases the trap density. Finally, a power conversion efficiency (PCE) of 24.13% is obtained with an excellent short-circuit current density of 26.10 mA cm-2 . The unencapsulated devices show excellent humidity stability and storage stability, and an initial PCE of 92.2% within 500 h under continuous light illumination, and bias voltage conditions is achieved. This study provides a universal strategy to address the inherent issues of Cs-FA devices and maintain the stability of MA-free PSCs to satisfy future commercial criteria
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|a Journal Article
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|a FAPbI3
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|a MA-free
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|a additive stabilizers
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|a perovskite solar cells
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|a stability
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|a Zhou, Donglei
|e verfasserin
|4 aut
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|a Liu, Shuainan
|e verfasserin
|4 aut
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|a Shi, Zhichong
|e verfasserin
|4 aut
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|a Sun, Rui
|e verfasserin
|4 aut
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|a Liang, Jin
|e verfasserin
|4 aut
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|a Jia, Yanrun
|e verfasserin
|4 aut
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|a Bian, Shuhang
|e verfasserin
|4 aut
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|a Liu, Zhongqi
|e verfasserin
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|a Song, Hongwei
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|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 40 vom: 18. Okt., Seite e2302393
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:35
|g year:2023
|g number:40
|g day:18
|g month:10
|g pages:e2302393
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|u http://dx.doi.org/10.1002/adma.202302393
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