Protonated Organic Semiconductors : Origin of Water-Induced Charge-Trap Generation

© 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 35(2023), 42 vom: 17. Okt., Seite e2303707
1. Verfasser: Park, Sangsik (VerfasserIn)
Weitere Verfasser: Choi, Wookjin, Kim, Seung Hyun, Lee, Hansol, Cho, Kilwon
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2023
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article indacenodithiophene-co-benzothiadiazole copolymer (IDTBT) operational stability organic field-effect transistors organic semiconductors water-induced trap generation
LEADER 01000naa a22002652 4500
001 NLM358917050
003 DE-627
005 20231226075748.0
007 cr uuu---uuuuu
008 231226s2023 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.202303707  |2 doi 
028 5 2 |a pubmed24n1196.xml 
035 |a (DE-627)NLM358917050 
035 |a (NLM)37390456 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Park, Sangsik  |e verfasserin  |4 aut 
245 1 0 |a Protonated Organic Semiconductors  |b Origin of Water-Induced Charge-Trap Generation 
264 1 |c 2023 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Revised 20.10.2023 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH. 
520 |a Despite dramatic improvements in the electronic characteristics of organic semiconductors, the low operational stability of organic field-effect transistors (OFETs) hinders their direct use in practical applications. Although the literature contains numerous reports on the effects of water on the operational stability of OFETs, the underlying mechanisms of trap generation induced by water remain unclear. Here, a protonation-induced trap generation of organic semiconductors is proposed as a possible origin of the operational instability in organic field-effect transistors. Spectroscopic and electronic investigation techniques combined with simulations reveal that the direct protonation of organic semiconductors by water during operation may be responsible for the trap generation induced by bias stress; this phenomenon is independent of the trap generation at an insulator surface. In addition, the same feature occurred in small-bandgap polymers with fused thiophene rings irrespective of their crystalline ordering, implying the generality of protonation induced trap generation in various polymer semiconductors with a small bandgap. The finding of the trap-generation process provides new perspectives for achieving greater operational stability of organic field-effect transistors 
650 4 |a Journal Article 
650 4 |a indacenodithiophene-co-benzothiadiazole copolymer (IDTBT) 
650 4 |a operational stability 
650 4 |a organic field-effect transistors 
650 4 |a organic semiconductors 
650 4 |a water-induced trap generation 
700 1 |a Choi, Wookjin  |e verfasserin  |4 aut 
700 1 |a Kim, Seung Hyun  |e verfasserin  |4 aut 
700 1 |a Lee, Hansol  |e verfasserin  |4 aut 
700 1 |a Cho, Kilwon  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 35(2023), 42 vom: 17. Okt., Seite e2303707  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:35  |g year:2023  |g number:42  |g day:17  |g month:10  |g pages:e2303707 
856 4 0 |u http://dx.doi.org/10.1002/adma.202303707  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 35  |j 2023  |e 42  |b 17  |c 10  |h e2303707