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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202303304
|2 doi
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|a pubmed25n1194.xml
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|a (DE-627)NLM358554969
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|a (NLM)37354127
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Du, Songyu
|e verfasserin
|4 aut
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| 245 |
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|a Hot-Exciton Mechanism and AIE Effect Boost the Performance of Deep-Red Emitters in Non-Doped OLEDs
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 27.09.2023
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|a published: Print-Electronic
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|a Citation Status Publisher
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|a © 2023 Wiley-VCH GmbH.
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|a Luminescent materials possessing a "hot-exciton" mechanism and aggregation-induced emission (AIE) qualities are well-suited for use as emitting materials in nondoped organic light-emitting diodes (OLEDs), particularly in deep-red regions where their ground state and singlet excited state surfaces are in proximity, leading to the formation of multiple nonradiative channels. However, designing molecules that artificially combine the hot-exciton mechanism and AIE attributes remains a formidable task. In this study, a versatile strategy is presented to achieve hot-exciton fluorescence with AIE property by increasing the first singlet excited (S1 ) state through modulation of the conjugation length of the newly created acceptor unit, matching the energy level of high-lying triplet (Tn ) states, and enhancing exciton utilization efficiency by employing suitable donor moieties. This approach reduces the aggregation-caused quenching (ACQ) in the aggregate state, resulting in the proof-of-concept emitter DT-IPD, which produces an unprecedented external quantum efficiency (EQE) of 12.2% and Commission Internationale de I'Eclairage (CIE) coordinates of (0.69, 0.30) in a deep-red non-doped OLED at 685 nm, representing the highest performance among all deep-red OLEDs based on materials with hot-exciton mechanisms. This work provides novel insights into the design of more efficient hot-exciton emitters with AIE properties
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4 |
|a Journal Article
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4 |
|a aggregation-induced emission
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4 |
|a deep-red
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4 |
|a high-lying triplet excitons
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| 650 |
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4 |
|a hot excitons
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| 650 |
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4 |
|a organic light-emitting diodes
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| 700 |
1 |
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|a Luo, Ming
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Deli
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lyu, Lingling
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Wei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhao, Mengyu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Zhichuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Jiasen
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Denghui
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Yong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Su, Shi-Jian
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ge, Ziyi
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 39 vom: 04. Sept., Seite e2303304
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
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|g volume:35
|g year:2023
|g number:39
|g day:04
|g month:09
|g pages:e2303304
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202303304
|3 Volltext
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|d 35
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|e 39
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|c 09
|h e2303304
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