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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202303737
|2 doi
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|a pubmed24n1194.xml
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|a (DE-627)NLM358411203
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|a (NLM)37339620
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|a DE-627
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|a eng
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|a Huang, Junhua
|e verfasserin
|4 aut
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|a Flexible, Transparent, and Wafer-Scale Artificial Synapse Array Based on TiOx /Ti3 C2 Tx Film for Neuromorphic Computing
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 17.08.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a A high-density neuromorphic computing memristor array based on 2D materials paves the way for next-generation information-processing components and in-memory computing systems. However, the traditional 2D-materials-based memristor devices suffer from poor flexibility and opacity, which hinders the application of memristors in flexible electronics. Here, a flexible artificial synapse array based on TiOx /Ti3 C2 Tx film is fabricated by a convenient and energy-efficient solution-processing technique, which realizes high transmittance (≈90%) and oxidation resistance (>30 days). The TiOx /Ti3 C2 Tx memristor shows low device-to-device variability, long memory retention and endurance, a high ON/OFF ratio, and fundamental synaptic behavior. Furthermore, satisfactory flexibility (R = 1.0 mm) and mechanical endurance (104 bending cycles) of the TiOx /Ti3 C2 Tx memristor are achieved, which is superior to other film memristors prepared by chemical vapor deposition. In addition, high-precision (>96.44%) MNIST handwritten digits recognition classification simulation indicates that the TiOx /Ti3 C2 Tx artificial synapse array holds promise for future neuromorphic computing applications, and provides excellent high-density neuron circuits for new flexible intelligent electronic equipment
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|a Journal Article
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|a 2D materials
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|a TiOx/Ti3C2Tx heterostructure
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|a flexible artificial synapse arrays
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|a neuromorphic computing
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| 700 |
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|a Yang, Shaodian
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Tang, Xin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yang, Leilei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Wenjun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Zibo
|e verfasserin
|4 aut
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| 700 |
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|a Li, Xinming
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zeng, Zhiping
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Tang, Zikang
|e verfasserin
|4 aut
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| 700 |
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|a Gui, Xuchun
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 33 vom: 14. Aug., Seite e2303737
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:35
|g year:2023
|g number:33
|g day:14
|g month:08
|g pages:e2303737
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|u http://dx.doi.org/10.1002/adma.202303737
|3 Volltext
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