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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202302454
|2 doi
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|a pubmed24n1193.xml
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|a (DE-627)NLM358083710
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|a (NLM)37306652
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Chen, Chong
|e verfasserin
|4 aut
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|a Direct-Current Electrical Detection of Surface-Acoustic-Wave-Driven Ferromagnetic Resonance
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 21.09.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a Surface acoustic waves (SAW) provide a promising platform to study spin-phonon coupling, which can be achieved by SAW-driven ferromagnetic resonance (FMR) for efficient acoustic manipulation of spin. Although the magneto-elastic effective field model has achieved great success in describing SAW-driven FMR, the magnitude of the effective field acting on the magnetization induced by SAW still remains hard to access. Here, by integrating ferromagnetic stripes with SAW devices, direct-current detection for SAW-driven FMR based on electrical rectification is reported. By analyzing FMR rectified voltage, the effective fields are straightforwardly characterized and extracted, which exhibits the advantages of better integration compatibility and lower cost than traditional methods such as vector-network analyzer-based techniques. A large nonreciprocal rectified voltage is obtained, which is attributed to the coexistence of in-plane and out-of-plane effective fields. The effective fields can be modulated by controlling the longitudinal and shear strains within the films to achieve almost 100% nonreciprocity ratio, demonstrating the potential for electrical switches. Besides its fundamental significance, this finding provides a unique opportunity for a designable spin acousto-electronic device and its convenient signal readout
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|a Journal Article
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|a effective fields
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|a electrical detection
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|a ferromagnetic resonance
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|a magneto-elastic coupling
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|a nonreciprocity
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|a surface acoustic wave
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1 |
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|a Han, Lei
|e verfasserin
|4 aut
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1 |
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|a Liu, Peisen
|e verfasserin
|4 aut
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1 |
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|a Zhang, Yichi
|e verfasserin
|4 aut
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1 |
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|a Liang, Shixuan
|e verfasserin
|4 aut
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1 |
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|a Zhou, Yongjian
|e verfasserin
|4 aut
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1 |
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|a Zhu, Wenxuan
|e verfasserin
|4 aut
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1 |
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|a Fu, Sulei
|e verfasserin
|4 aut
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1 |
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|a Pan, Feng
|e verfasserin
|4 aut
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700 |
1 |
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|a Song, Cheng
|e verfasserin
|4 aut
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773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 38 vom: 11. Sept., Seite e2302454
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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773 |
1 |
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|g volume:35
|g year:2023
|g number:38
|g day:11
|g month:09
|g pages:e2302454
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|u http://dx.doi.org/10.1002/adma.202302454
|3 Volltext
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|a GBV_ILN_350
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|a AR
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|d 35
|j 2023
|e 38
|b 11
|c 09
|h e2302454
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