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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202304171
|2 doi
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|a pubmed24n1192.xml
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|a (DE-627)NLM357804775
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|a (NLM)37278555
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|a DE-627
|b ger
|c DE-627
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|a eng
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| 100 |
1 |
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|a Sun, Xiaona
|e verfasserin
|4 aut
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| 245 |
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|a Controllable Synthesis of 2H-1T' Mox Re(1- x ) S2 Lateral Heterostructures and Their Tunable Optoelectronic Properties
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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| 338 |
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 21.09.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a Constructing heterostructures and doping are valid ways to improve the optoelectronic properties of transition metal dichalcogenides (TMDs) and optimize the performance of TMDs-based photodetectors. Compared with transfer techniques, chemical vapor deposition (CVD) has higher efficiency in preparing heterostructures. As for the one-step CVD growth of heterostructures, cross-contamination between the two materials may occur during the growth process, which may provide the possibility of one-step simultaneous realization of controllable doping and formation of alloy-based heterostructures by finely tuning the growth dynamics. Here, 2H-1T' Mox Re(1- x ) S2 alloy-to-alloy lateral heterostructures are synthesized through this one-step CVD growth method, utilizing the cross-contamination and different growth temperatures of the two alloys. Due to the doping of a small amount of Re atoms in 2H MoS2 , 2H Mox Re(1- x ) S2 has a high response rejection ratio in the solar-blind ultraviolet (SBUV) region and exhibits a positive photoconductive (PPC) effect. While the 1T' Mox Re(1- x ) S2 formed by heavily doping Mo atoms into 1T' ReS2 will produce a negative photoconductivity (NPC) effect under UV laser irradiation. The optoelectronic property of 2H-1T' Mox Re(1- x ) S2 -based heterostructures can be modulated by gate voltage. These findings are expected to expand the functionality of traditional optoelectronic devices and have potential applications in optoelectronic logic devices
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|a Journal Article
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|a MoxRe(1-x)S2 alloys
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|a chemical vapor deposition
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4 |
|a heterostructures
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| 650 |
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4 |
|a photodetectors
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| 700 |
1 |
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|a Liu, Yang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Shi, Jianwei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Si, Chen
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Du, Jiantao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Xinfeng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Jiang, Chengbao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yang, Shengxue
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 38 vom: 06. Sept., Seite e2304171
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:35
|g year:2023
|g number:38
|g day:06
|g month:09
|g pages:e2304171
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202304171
|3 Volltext
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|a AR
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|d 35
|j 2023
|e 38
|b 06
|c 09
|h e2304171
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