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|a 10.1002/adma.202303544
|2 doi
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|a pubmed24n1192.xml
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|a (DE-627)NLM357672941
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|a (NLM)37265238
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|a DE-627
|b ger
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|a eng
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| 100 |
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|a Liu, Songlong
|e verfasserin
|4 aut
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|a Epitaxy of a Monocrystalline CsPbBr3 -SrTiO3 Halide-Oxide Perovskite p-n Heterojunction with High Stability for Photodetection
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|c 2023
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|a Text
|b txt
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 03.08.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a Perovskite heterojunctions are essential components of perovskite optoelectronics, but their construction and investigation have been impeded by the instability and severe anion interdiffusion. This work epitaxially deposits p-type CsPbBr3 on n-type Nb:SrTiO3 (STO) to construct a functional perovskite heterojunction with high stability. The lattice match allows epitaxial growth of CsPbBr3 to occur over large scale, resulting in a monocrystalline thin film with excellent crystallinity and uniformity. The highly stable STO prevents the anion migration frequently happening in halide perovskites, forming a sharp interface of two perovskite with opposite conduction type, with which a diode is fabricated and a current rectification ratio of 374 is obtained. The diode is able to work as a photodetector with dark current of 2.01 × 10-12 A at -1 V and responsivity (R) of 8.26 A W-1 , rendering a detectivity (D*) of 2.98 × 1013 Jones. Owing to the all-inorganic architecture, effective photoresponse at temperature as high as 150 °C is guaranteed with D* of ≈1.52 × 1013 Jones. Combining the unique optoelectrical properties of halide perovskite and the rigidity of oxide perovskite, the epitaxy of CsPbBr3 on n-type STO opens up a new method to construct functional perovskite heterojunction for optoelectronics
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|a Journal Article
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|a heterojunctions
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|a monocrystalline thin films
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|a perovskites
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|a photodetectors
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1 |
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|a Chen, Yang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Gao, Weiqi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Wanying
|e verfasserin
|4 aut
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1 |
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|a Yang, Xiaokun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Zhiwei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xiao, Zhaojing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Yuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Yiliu
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 31 vom: 23. Aug., Seite e2303544
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:35
|g year:2023
|g number:31
|g day:23
|g month:08
|g pages:e2303544
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|u http://dx.doi.org/10.1002/adma.202303544
|3 Volltext
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