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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202300577
|2 doi
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|a pubmed25n1190.xml
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|a (DE-627)NLM357106903
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|a (NLM)37208182
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Ruan, Pengchao
|e verfasserin
|4 aut
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|a Achieving Highly Proton-Resistant Zn-Pb Anode through Low Hydrogen Affinity and Strong Bonding for Long-Life Electrolytic Zn//MnO2 Battery
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 03.08.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a High-energy electrolytic Zn//MnO2 batteries show potential for grid-scale energy storage, but the severe hydrogen evolution corrosion (HEC) caused by acidic electrolytes results in subdued durability. Here, an all-around protection strategy is reported for achieving stable Zn metal anodes. First, a proton-resistant Pb-containing (Pb and Pb(OH)2 ) interface is constructed on a Zn anode (denoted as ZnPb), which in situ forms PbSO4 during H2 SO4 corrosion and protects the Zn substrate from HEC. Second, to improve the plating/stripping reversibility of Zn@Pb, Pb(CH3 COO)2 an additive (denoted as Zn@Pb-Ad) is introduced, which triggers PbSO4 precipitation and releases trace Pb2+ that can dynamically deposit a Pb layer on the Zn plating layer to suppress HEC. The superior HEC resistance stems from the low affinity of PbSO4 and Pb for H+ , as well as strong bonding between Pb-Zn or Pb-Pb, which increase the hydrogen evolution reaction overpotential and the H+ corrosion energy barrier. Consequently, the Zn@Pb-Ad//MnO2 battery runs stably for 630 and 795 h in 0.2 and 0.1 m H2 SO4 electrolytes, respectively, which are >40 times better than that of bare Zn. The as-prepared A h-level battery achieves a one-month calendar life, opening the door to the next generation of high-durable grid-scale Zn batteries
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|a Journal Article
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|a MnO2/Mn2+ conversion reaction
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|a acidic electrolytes
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|a aqueous Zn batteries
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|a high durability
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|a high proton resistance
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1 |
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|a Chen, Xianhong
|e verfasserin
|4 aut
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1 |
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|a Qin, Liping
|e verfasserin
|4 aut
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1 |
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|a Tang, Yan
|e verfasserin
|4 aut
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1 |
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|a Lu, Bingan
|e verfasserin
|4 aut
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|a Zeng, Zhiyuan
|e verfasserin
|4 aut
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|a Liang, Shuquan
|e verfasserin
|4 aut
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|a Zhou, Jiang
|e verfasserin
|4 aut
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773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 31 vom: 04. Aug., Seite e2300577
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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773 |
1 |
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|g volume:35
|g year:2023
|g number:31
|g day:04
|g month:08
|g pages:e2300577
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|u http://dx.doi.org/10.1002/adma.202300577
|3 Volltext
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|d 35
|j 2023
|e 31
|b 04
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|h e2300577
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