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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202301067
|2 doi
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|a pubmed24n1190.xml
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|a (DE-627)NLM357068416
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|a (NLM)37204321
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|a DE-627
|b ger
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|a eng
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|a Wang, Hao
|e verfasserin
|4 aut
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|a Ultrafast-Programmable 2D Homojunctions Based on van der Waals Heterostructures on a Silicon Substrate
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 11.08.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a The development of electrically ultrafast-programmable semiconductor homojunctions can lead to transformative multifunctional electronic devices. However, silicon-based homojunctions are not programmable so that alternative materials need to be explored. Here 2D, multi-functional, lateral homojunctions made of van der Waals heterostructures with a semi-floating-gate configuration on a p++ Si substrate feature atomically sharp interfaces and can be electrostatically programmed in nanoseconds, more than seven orders of magnitude faster than other 2D-based homojunctions. By applying voltage pulses with different polarities, lateral p-n, n+ -n and other types of homojunctions can be formed, varied, and reversed. The p-n homojunctions possess a high rectification ratio of up to ≈105 and can be dynamically switched between four distinct conduction states with the current spanning over nine orders of magnitude, enabling them to function as logic rectifiers, memories, and multi-valued logic inverters. Built on a p++ Si substrate, which acts as the control gate, the devices are compatible with Si technology
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|a Journal Article
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|a 2D homojunctions
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4 |
|a logic rectifiers
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4 |
|a multi-valued logic inverters
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| 650 |
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4 |
|a ultrafast programming
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| 650 |
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|a van der Waals heterostructures
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| 700 |
1 |
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|a Bao, Lihong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Guzman, Roger
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wu, Kang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Aiwei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Li
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wu, Liangmei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Jiancui
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Huan, Qing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhou, Wu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Pantelides, Sokrates T
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Gao, Hong-Jun
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 32 vom: 31. Aug., Seite e2301067
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:35
|g year:2023
|g number:32
|g day:31
|g month:08
|g pages:e2301067
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|u http://dx.doi.org/10.1002/adma.202301067
|3 Volltext
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|d 35
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