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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202210847
|2 doi
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|a pubmed24n1187.xml
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|a (DE-627)NLM356240967
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|a (NLM)37120703
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|a DE-627
|b ger
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|a eng
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| 100 |
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|a Feng, Kui
|e verfasserin
|4 aut
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|a Cyano-Functionalized Fused Bithiophene Imide Dimer-Based n-Type Polymers for High-Performance Organic Thermoelectrics
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|c 2023
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|a Text
|b txt
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 03.08.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a Doped n-type polymers usually exhibit low electrical conductivities and thermoelectric power factors (PFs), restricting the development of high-performance p-n-junction-based organic thermoelectrics (OTEs). Herein, the design and synthesis of a new cyano-functionalized fused bithiophene imide dimer (f-BTI2), CNI2, is reported, which synergistically combines the advantages of both cyano and imide functionalities, thus leading to substantially higher electron deficiency than the parent f-BTI2. On the basis of this novel building block, a series of n-type donor-acceptor and acceptor-acceptor polymers are successfully synthesized, all of which show good solubility, deep-lying frontier molecular orbital levels, and favorable polymer chain orientation. Among them, the acceptor-acceptor polymer PCNI2-BTI delivers an excellent electrical conductivity up to 150.2 S cm-1 and a highest PF of 110.3 µW m-1 K-2 in n-type OTEs, attributed to the optimized polymer electronic properties and film morphology with improved molecular packing and higher crystallinity assisted by solution-shearing technology. The PF value is the record of n-type polymers for OTEs to date. This work demonstrates a facile approach to designing high-performance n-type polymers and fabricating high-quality films for OTE applications
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|a Journal Article
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|a conductivity
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|a cyano functionalization
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|a morphology optimization
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|a n-type polymer semiconductors
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|a organic thermoelectrics
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|a Yang, Wanli
|e verfasserin
|4 aut
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|a Jeong, Sang Young
|e verfasserin
|4 aut
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|a Ma, Suxiang
|e verfasserin
|4 aut
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|a Li, Yongchun
|e verfasserin
|4 aut
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|a Wang, Junwei
|e verfasserin
|4 aut
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|a Wang, Yimei
|e verfasserin
|4 aut
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|a Woo, Han Young
|e verfasserin
|4 aut
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|a Chan, Paddy Kwok Leung
|e verfasserin
|4 aut
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|a Wang, Gang
|e verfasserin
|4 aut
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|a Guo, Xugang
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|4 aut
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|a Zhu, Meifang
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 31 vom: 29. Aug., Seite e2210847
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:35
|g year:2023
|g number:31
|g day:29
|g month:08
|g pages:e2210847
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|u http://dx.doi.org/10.1002/adma.202210847
|3 Volltext
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