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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202211962
|2 doi
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|a pubmed25n1185.xml
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|a (DE-627)NLM355832798
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|a (NLM)37079482
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|a DE-627
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|a eng
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|a Li, Xin
|e verfasserin
|4 aut
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|a Surface Reconstruction for Efficient and Stable Monolithic Perovskite/Silicon Tandem Solar Cells with Greatly Suppressed Residual Strain
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|c 2023
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|a Text
|b txt
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 27.07.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a Despite the swift rise in power conversion efficiency (PCE) to more than 32%, the instability of perovskite/silicon tandem solar cells is still one of the key obstacles to practical application and is closely related to the residual strain of perovskite films. Herein, a simple surface reconstruction strategy is developed to achieve a global incorporation of butylammonium cations at both surface and bulk grain boundaries by post-treating perovskite films with a mixture of N,N-dimethylformamide and n-butylammonium iodide in isopropanol solvent, enabling strain-free perovskite films with simultaneously reduced defect density, suppressed ion migration, and improved energy level alignment. As a result, the corresponding single-junction perovskite solar cells yield a champion PCE of 21.8%, while maintaining 100% and 81% of their initial PCEs without encapsulation after storage for over 2500 h in N2 and 1800 h in air, respectively. Remarkably, a certified stabilized PCE of 29.0% for the monolithic perovskite/silicon tandems based on tunnel oxide passivated contacts is further demonstrated. The unencapsulated tandem device retains 86.6% of its initial performance after 306 h at maximum power point (MPP) tracking under continuous xenon-lamp illumination without filtering ultraviolet light (in air, 20-35 °C, 25-75%RH, most often ≈60%RH)
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|a Journal Article
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|a perovskite/silicon tandem solar cells
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|a perovskites
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|a post-treatment
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|a residual strain
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|a surface reconstruction
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|a Ying, Zhiqin
|e verfasserin
|4 aut
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|a Zheng, Jingming
|e verfasserin
|4 aut
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|a Wang, Xinlong
|e verfasserin
|4 aut
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|a Chen, Ying
|e verfasserin
|4 aut
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|a Wu, Ming
|e verfasserin
|4 aut
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|a Xiao, Chuanxiao
|e verfasserin
|4 aut
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|a Sun, Jingsong
|e verfasserin
|4 aut
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|a Shou, Chunhui
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|a Yang, Zhenhai
|e verfasserin
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|a Zeng, Yuheng
|e verfasserin
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|a Yang, Xi
|e verfasserin
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|a Ye, Jichun
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 30 vom: 14. Juli, Seite e2211962
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
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|g volume:35
|g year:2023
|g number:30
|g day:14
|g month:07
|g pages:e2211962
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|u http://dx.doi.org/10.1002/adma.202211962
|3 Volltext
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