Large Magnetoresistance of Isolated Domain Walls in La2/3 Sr1/3 MnO3 Nanowires

© 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 35(2023), 33 vom: 13. Aug., Seite e2211176
1. Verfasser: Orfila, Gloria (VerfasserIn)
Weitere Verfasser: Sanchez-Manzano, David, Arora, Ashima, Cuellar, Fabian, Ruiz-Gómez, Sandra, Rodriguez-Corvillo, Sara, López, Sandra, Peralta, Andrea, Carreira, Santiago J, Gallego, Fernando, Tornos, Javier, Rouco, Victor, Riquelme, Juan J, Munuera, Carmen, Mompean, Federico J, Garcia-Hernandez, Mar, Sefrioui, Zouhair, Villegas, Javier E, Perez, Lucas, Rivera-Calzada, Alberto, Leon, Carlos, Valencia, Sergio, Santamaria, Jacobo
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2023
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article domain wall resistance magnetoresistance manganites nanomagnetism spintronics
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520 |a Generation, manipulation, and sensing of magnetic domain walls are cornerstones in the design of efficient spintronic devices. Half-metals are amenable for this purpose as large low field magnetoresistance signals can be expected from spin accumulation at spin textures. Among half metals, La1- x Srx MnO3 (LSMO) manganites are considered as promising candidates for their robust half-metallic ground state, Curie temperature above room temperature (Tc = 360 K, for x = 1/3), and chemical stability. Yet domain wall magnetoresistance is poorly understood, with large discrepancies in the reported values and conflicting interpretation of experimental data due to the entanglement of various source of magnetoresistance, namely, spin accumulation, anisotropic magnetoresistance, and colossal magnetoresistance. In this work, the domain wall magnetoresistance is measured in LSMO cross-shape nanowires with single-domain walls nucleated across the current path. Magnetoresistance values above 10% are found to be originating at the spin accumulation caused by the mistracking effect of the spin texture of the domain wall by the conduction electrons. Fundamentally, this result shows the importance on non-adiabatic processes at spin textures despite the strong Hund coupling to the localized t2g electrons of the manganite. These large magnetoresistance values are high enough for encoding and reading magnetic bits in future oxide spintronic sensors 
650 4 |a Journal Article 
650 4 |a domain wall resistance 
650 4 |a magnetoresistance 
650 4 |a manganites 
650 4 |a nanomagnetism 
650 4 |a spintronics 
700 1 |a Sanchez-Manzano, David  |e verfasserin  |4 aut 
700 1 |a Arora, Ashima  |e verfasserin  |4 aut 
700 1 |a Cuellar, Fabian  |e verfasserin  |4 aut 
700 1 |a Ruiz-Gómez, Sandra  |e verfasserin  |4 aut 
700 1 |a Rodriguez-Corvillo, Sara  |e verfasserin  |4 aut 
700 1 |a López, Sandra  |e verfasserin  |4 aut 
700 1 |a Peralta, Andrea  |e verfasserin  |4 aut 
700 1 |a Carreira, Santiago J  |e verfasserin  |4 aut 
700 1 |a Gallego, Fernando  |e verfasserin  |4 aut 
700 1 |a Tornos, Javier  |e verfasserin  |4 aut 
700 1 |a Rouco, Victor  |e verfasserin  |4 aut 
700 1 |a Riquelme, Juan J  |e verfasserin  |4 aut 
700 1 |a Munuera, Carmen  |e verfasserin  |4 aut 
700 1 |a Mompean, Federico J  |e verfasserin  |4 aut 
700 1 |a Garcia-Hernandez, Mar  |e verfasserin  |4 aut 
700 1 |a Sefrioui, Zouhair  |e verfasserin  |4 aut 
700 1 |a Villegas, Javier E  |e verfasserin  |4 aut 
700 1 |a Perez, Lucas  |e verfasserin  |4 aut 
700 1 |a Rivera-Calzada, Alberto  |e verfasserin  |4 aut 
700 1 |a Leon, Carlos  |e verfasserin  |4 aut 
700 1 |a Valencia, Sergio  |e verfasserin  |4 aut 
700 1 |a Santamaria, Jacobo  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 35(2023), 33 vom: 13. Aug., Seite e2211176  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:35  |g year:2023  |g number:33  |g day:13  |g month:08  |g pages:e2211176 
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