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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202300510
|2 doi
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|a pubmed24n1184.xml
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|a (DE-627)NLM355344254
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|a eng
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|a Li, Nengquan
|e verfasserin
|4 aut
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|a Versatile Host Materials for Both D-A-Type and Multi-Resonance TADF Emitters toward Solution-Processed OLEDs with Nearly 30% EQE
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 17.07.2023
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|a Date Revised 18.07.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a Fabricating solution-processible host material for thermally activated delayed fluorescence (TADF) emitter remains a formidable challenge for organic light-emitting diodes (OLEDs). In this work, two new host materials, namely 3CzAcPy and 9CzAcPy, are found to exhibit high triplet energy levels, high thermal stability, and excellent film morphology from a solution process. An in-depth analysis on the photophysical data and device performance reveals the isomeric effect of the host materials has a significant impact not only on the host properties, but also on the host-dopant interactions and thus the performance of the resulting solution-processed TADF OLEDs. Impressively, the new hosts are proven to be suitable for both donor-acceptor type and multi-resonance TADF emitters, achieving state-of-the-art device performance. By using the new host 9CzAcPy, solution-processed OLED based on a donor-acceptor TADF emitter of DPAC-PCN, a maximum external quantum efficiency (EQE) of 29.5% is achieved, and solution-processed narrowband OLED based on a multiple-resonance TADF emitter of BN-CP1 acquires a maximum EQE of 26.6%. These efficiencies represent the highest values among the solution-processed TADF OLEDs. This study highlights the significance of host-dopant interactions in modulating the electroluminescence performance of TADF emitters, and provides an effective design principle for solution-processible host materials
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|a Journal Article
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|a host materials
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|a organic light-emitting diodes
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|a solution processing
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|a thermally activated delayed fluorescence
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|a Chen, Zhanxiang
|e verfasserin
|4 aut
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| 700 |
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|a Zhou, Changjiang
|e verfasserin
|4 aut
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| 700 |
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|a Ni, Fan
|e verfasserin
|4 aut
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|a Huang, Zhongyan
|e verfasserin
|4 aut
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|a Cao, Xiaosong
|e verfasserin
|4 aut
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| 700 |
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|a Yang, Chuluo
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 28 vom: 01. Juli, Seite e2300510
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:35
|g year:2023
|g number:28
|g day:01
|g month:07
|g pages:e2300510
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|u http://dx.doi.org/10.1002/adma.202300510
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