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231226s2023 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202300621
|2 doi
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|a pubmed24n1184.xml
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|a (DE-627)NLM355325497
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|a (NLM)37027890
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Hu, Zhaoning
|e verfasserin
|4 aut
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| 245 |
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|a Rapid and Scalable Transfer of Large-Area Graphene Wafers
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|c 2023
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 20.07.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a Recently, scalable production of large-area graphene films on metal foils with promising qualities is successfully achieved by eliminating grain boundaries, wrinkles, and adlayers. The transfer of graphene from growth metal substrates onto functional substrates remains one inescapable obstacle on the road to the real commercial applications of chemical vaport deposition (CVD) graphene films. Current transfer methods still require time-consuming chemical reactions, which hinders its mass production, and produces cracks and contamination that strongly impede performance reproducibility. Therefore, graphene transfer techniques with fine intactness and cleanness of transferred graphene, and improved production efficiency would be ideal for the mass production of graphene films on destination substrates. Herein, through the engineering of interfacial forces enabled by sophisticated design of transfer medium, the crack-free and clean transfer of 4-inch-sized graphene wafers onto silicon wafers within only 15 min is realized. The reported transfer method is an important leap over the long-lasting obstacle of the batch-scale graphene transfer without degrading the quality of graphene, bringing the graphene products close to the real applications
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|a Journal Article
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|a CVD graphene films
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|a graphene transfer
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|a graphene wafers
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|a Li, Fangfang
|e verfasserin
|4 aut
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|a Wu, Haotian
|e verfasserin
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|a Liao, Junhao
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|a Wang, Quan
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|a Chen, Ge
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|a Shi, Zhuofeng
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|a Zhu, Yaqi
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|a Bu, Saiyu
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|a Zhao, Yixuan
|e verfasserin
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|a Shang, Mingpeng
|e verfasserin
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|a Lu, Qi
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|a Jia, Kaicheng
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|a Xie, Qin
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|a Wang, Guorui
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|a Zhang, Xiaodong
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|a Zhu, Yinbo
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|a Wu, Hengan
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|a Peng, Hailin
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|a Lin, Li
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|a Liu, Zhongfan
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 29 vom: 21. Juli, Seite e2300621
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:35
|g year:2023
|g number:29
|g day:21
|g month:07
|g pages:e2300621
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|u http://dx.doi.org/10.1002/adma.202300621
|3 Volltext
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