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|a 10.1002/adma.202301406
|2 doi
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|a pubmed24n1184.xml
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|a (DE-627)NLM355270307
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|a (NLM)37022336
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Wu, Haodi
|e verfasserin
|4 aut
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|a Mechanochemical Synthesis of High-Entropy Perovskite toward Highly Sensitive and Stable X-ray Flat-Panel Detectors
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|c 2023
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|a Text
|b txt
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 20.07.2023
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 Wiley-VCH GmbH.
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|a Perovskites are attracting attention for optoelectronic devices. Despite their promise, the large-scale synthesis of perovskite materials with exact stoichiometry, especially high-entropy perovskites, has been a major challenge. Moreover, the difficulty in stoichiometry control also hinders the development of perovskite X-ray flat-panel detectors. Previous reports all employed simple MAPbI3 as the active layer, while the performance still falls short of optimized single-crystal-based single-pixel detectors. Herein, a scalable and universal strategy of a mechanochemical method is adopted to synthesize stoichiometric high-entropy perovskite powders with high quality and high quantity (>1 kg per batch). By utilizing these stoichiometric perovskites, the first FA0.9 MA0.05 Cs0.05 Pb(I0.9 Br0.1 )3 -based X-ray flat-panel detector with low trap density and large mobility-lifetime product (7.5 × 10-3 cm2 V-1 ) is reported. The assembled panel detector exhibits close-to-single-crystal performance (high sensitivity of 2.1 × 104 µC Gyair -1 cm-2 and ultralow detection limit of 1.25 nGyair s-1 ), high spatial resolution of 0.46 lp/pixel, as well as excellent thermal robustness under industrial standards. The high performance in the high-entropy perovskite-based X-ray FPDs has the potential to facilitate the development of new-generation X-ray-detection systems
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|a Journal Article
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|a X-ray flat-panel detectors
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|a high-entropy perovskites
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|a mechanochemistry
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|a Chen, Xu
|e verfasserin
|4 aut
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|a Song, Zihao
|e verfasserin
|4 aut
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|a Zhang, Ao
|e verfasserin
|4 aut
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|a Du, Xinyuan
|e verfasserin
|4 aut
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|a He, Xin
|e verfasserin
|4 aut
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|a Wang, Hanqi
|e verfasserin
|4 aut
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|a Xu, Ling
|e verfasserin
|4 aut
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|a Zheng, Zhiping
|e verfasserin
|4 aut
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|a Niu, Guangda
|e verfasserin
|4 aut
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|a Tang, Jiang
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 35(2023), 29 vom: 18. Juli, Seite e2301406
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:35
|g year:2023
|g number:29
|g day:18
|g month:07
|g pages:e2301406
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|u http://dx.doi.org/10.1002/adma.202301406
|3 Volltext
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